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首页> 美国政府科技报告 >Low Temperature Epitaxial Deposition of Silicon by Plasma Enhanced CVD (Chemical Vapor Deposition)
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Low Temperature Epitaxial Deposition of Silicon by Plasma Enhanced CVD (Chemical Vapor Deposition)

机译：等离子体增强CVD（化学气相沉积）对硅的低温外延沉积

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A reactor system has been developed to deposit specular epitaxial silicon films at temperatures as low as 620 C using a low pressure chemical vapor deposition process both with and without plasma enhancement. This represents the lowest silicon epitaxial deposition temperature ever reported for a thermally driven chemical vapor deposition process. Experiments performed at 775 C indicate that the predeposition in-situ cleaning of the substrate surface is the critical step in determining whether epitaxial deposition will occur. Surface cleaning in these experiments was done by sputtering in an argon plasma ambient at the deposition temperature while applying a dc bias to the susceptor. This is the lowest pre-epitaxial cleaning temperature ever reported for a thermally driven chemical vapor deposition. (Author)

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