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Surface-Emitting GaInAsP/InP Laser with Low Threshold Current and High Efficiency

机译：具有低阈值电流和高效率的表面发射GaInasp / Inp激光器

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摘要

A buried-heterostructure laser has been developed whose output is deflected in a direction perpendicular to the substrate surface by a monolithically integrated 45 degree (parabolic) mirror. The latter is fabricated by smoothing a chemically etched multistep structure using a mass- transport phenomenon. The present devices show threshold current as low as 12mA, differential quantum efficiency as high as 47% and a surface-emmitting far-field pattern with a main lobe as narrow as 12.

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作者
Liau, Z. L.; Walpole, J. N.;
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年度 1985
页码 p.1-4
总页数 4
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Threshold effects; Mirrors; Far field; Quantum efficiency; Substrates; Reprints;

机译：阈值效应;镜子;远场;量子效率;基板;重印;

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专利

1. Low threshold room temperature pulsed and -57 degrees C CW operations of 1.3 mu m GaInAsP/InP circular planar buried heterostructure surface-emitting lasers [J] . Baba T., Suzuki K. IEEE Photonics Technology Letters . 1993,第7期

机译：1.3μmGaInAsP / InP圆形平面埋藏异质结构表面发射激光器的低阈值室温脉冲和-57℃CW操作
2. Very low threshold current density 1.3 /spl mu/m InAsP/InP/InGaP/InP/GaInAsP strain-compensated multiple quantum well lasers [J] . Kasukawa A., Yokouchi N. Electronics Letters . 1995,第20期

机译：极低的阈值电流密度1.3 / spl mu / m InAsP / InP / InGaP / InP / GaInAsP应变补偿多量子阱激光器
3. Low-Threshold Current Density GaInAsP/InP Quantum-Wire Distributed Feedback Lasers Fabricated by Low-Damage Processes [J] . Yoshifumi NISHIMOTO, Koji MIURA, Hideki YAGI, Japanese Journal of Applied Physics. Part 2, Letters & Express Letters . 2007,第1a3期

机译：通过低损伤工艺制造的低阈值电流密度GaInAsP / InP量子线分布式反馈激光器
4. Very low threshold current density 1.3 mu m INAsP/InP/InGaP/InP/GaInAsP strain-compensated multiple quantum well lasers [C] . A.Kasukawa, N.Yokouchi, N.Yamanaka, International symposium on compound semiconductors . 1996

机译：极低的阈值电流密度1.3μm INAsP / InP / InGaP / InP / GaInAsP应变补偿多量子阱激光器
5. Optimization of MOCVD growth using tertiarybutylarsine and tertiarybutylphosphine for the realization of 1.55 micrometer low threshold current lasers [D] . Heimbuch, Mark Eugene. 1997

机译：使用叔丁基ar和叔丁基膦优化MOCVD生长以实现1.55微米低阈值电流激光器
6. Ultralong π-phase shift fiber Bragg grating empowered single-longitudinal mode DFB phosphate fiber laser with low-threshold and high-efficiency [O] . Man Jiang, Pu Zhou, Xijia Gu -1

机译：超长π相移光纤布拉格光栅具有低阈值和高效率的单纵模DFB磷酸盐光纤激光器
7. Ultrasmall and ultralow threshold GaInAsP-InP microdisk injection lasers: Design, fabrication, lasing characteristics and spontaneous emission factor [O] . Masayuki Fujita, Atsushi Sakai, Toshihiko Baba 1999

机译：超小和超低阈值GaInasp-Inp微盘注入激光器：设计，制造，激光特性和自发发射系数
8. Large Monolithic Two-Dimensional Arrays of GaInAsP/InP Surface-Emitting Lasers [R] . Liau, Z. L., Walpole, J. N. 1987

机译：GaInasp / Inp表面发光激光器的大型单片二维阵列

Surface-Emitting GaInAsP/InP Laser with Low Threshold Current and High Efficiency

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