• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文学位 >Optimization of MOCVD growth using tertiarybutylarsine and tertiarybutylphosphine for the realization of 1.55 micrometer low threshold current lasers
【24h】

Optimization of MOCVD growth using tertiarybutylarsine and tertiarybutylphosphine for the realization of 1.55 micrometer low threshold current lasers

机译：使用叔丁基ar和叔丁基膦优化MOCVD生长以实现1.55微米低阈值电流激光器

获取原文
获取原文并翻译 | 示例
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

This dissertation leads to a greater understanding of the parameters required to achieve low threshold current lasers using Metal Organic Chemical Vapor Deposition (MOCVD). First the bulk growth conditions for the safer sources Tertiarybutylarsine (TBA) and Tertiarybutylphosphine (TBP) will be highlighted. Then QW interfaces will be shown to have a dependence on growth purges as short as 0.5 seconds. Based on optimized interfaces, 1.55 $mu$m quantum well lasers grown with these sources resulted in record low threshold current densities of 220 A/cm$sp2$ for SQW unstrained, 180 A/cm$sp2$ for 2QW tensile strained, and 240 A/cm$sp2$ for 4QW compressively strained.;In order to achieve low threshold current, single mode devices with these active regions, ridge and buried lasers were investigated. For buried lasers, non-planar selective regrowth was necessary to create blocking layers along the edges of the active region. This type of planarized blocking structure requires precise control of both the etching and the regrowth conditions. The optimum conditions for non planar regrowth with MOCVD will be discussed. To optimize the blocking layer performance, the leakage through an n-p-n-p blocking layer will be analyzed and the leakage through the n-p-n transistor will be shown to be the limiting high current leakage path. The gain of this n-p-n transistor which is determined by the doping level, thickness, and positioning of the p-layer is shown to be the critical leakage parameter. Finally the realization of low threshold current 1.55 $mu$m buried lasers will be shown. Buried 2QW lasers exhibited uncoated thresholds less than 10 mA, low internal losses of 7 cm$sp{-1},$ efficiencies around 50%, and low leakage at currents below 200 mA.
机译：本文通过对金属有机化学气相沉积（MOCVD）技术实现低阈值电流激光器所需参数的深入理解。首先，将重点介绍安全来源叔丁基Ter（TBA）和叔丁基膦（TBP）的整体增长条件。然后，QW接口将显示出对生长清除的依赖，该延迟短至0.5秒。基于优化的接口，使用这些光源生长的1.55微米量子阱激光器产生了创纪录的低阈值电流密度，对于未应变的SQW为220 A / cm $ sp2 $，对于2QW拉伸应变为180 A / cm $ sp2 $，以及240为了实现低阈值电流，对具有这些有源区，脊形和埋藏式激光的单模器件进行了研究，以实现低阈值电流。对于埋入式激光器，非平面选择性再生长是必需的，以便沿有源区的边缘形成阻挡层。这种类型的平面化阻挡结构需要精确控制蚀刻和再生条件。将讨论使用MOCVD进行非平面再生长的最佳条件。为了优化阻挡层性能，将分析通过n-p-n-p阻挡层的泄漏，通过n-p-n晶体管的泄漏将显示为限制的大电流泄漏路径。由掺杂水平，厚度和p层的位置确定的n-p-n晶体管的增益被显示为临界泄漏参数。最后，将展示低阈值电流1.55μm掩埋激光器的实现。埋入式2QW激光器的未镀膜阈值小于10 mA，内部损耗低至7 cm $ sp {-1}，效率低至50％左右，电流低于200 mA时泄漏低。

著录项

  • 作者

    Heimbuch, Mark Eugene.;

  • 作者单位

    University of California, Santa Barbara.;

  • 授予单位 University of California, Santa Barbara.;
  • 学科 Electrical engineering.
  • 学位 Ph.D.
  • 年度 1997
  • 页码 238 p.
  • 总页数 238
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号