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A Comparison of Leed Intensity Data from Chemically Polished and Cleaved GaAs(110) Surfaces.

机译:化学抛光和切割Gaas(110)表面的Leed强度数据比较。

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摘要

Room-temperature LEED intensity-voltage profiles obtained from cleaved and from vacuum sputter-annealed chemically polished GaAs(110) surfaces are directly compared and, unlike Si(111) and Ge(111) cleaved faces, are shown to be essentially identical within experimental error. This result is ascribed to the partial bonding ionicity of GaAs. (Author)

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