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Low Temperature Thermal Oxidation of Silicon by Dry Oxygen Pressure above 1 Atm.

机译：干燥氧气压力高于1个大气压时硅的低温热氧化。

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The purpose of this communication is to report the initial results of experiments which demonstrate that dry pressure-oxidation, P-OX, significantly reduces the required oxidation temperatures of semiconductor silicon used for integrated circuit devices.

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作者
Zeto, R. J.; Thornton, C. G.; Hryckowian, E.; Bosco, C. D.;
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年度 1975
页码 1-2
总页数 2
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Oxidation; Silicon; Low temperature; Integrated circuits; Fabrication; Quality control; Reprints; Semiconductors;

机译：氧化;硅;低温;集成电路;制造;质量控制;重印;半导体;

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机译：用于在升高的温度和压力下测量气体的等温焦耳-汤姆森系数的流量量热仪-最高温度为473 K的氮气和最高温度为10 MPA的二氧化碳的温度测量结果
2. Formation of silicon dioxide layers at low temperatures (150–400?°C) by atmospheric pressure plasma oxidation of silicon [J] . Science and technology of advanced materials . 2007,第3期

机译：大气压等离子体氧化硅在低温（150–400？C）下形成二氧化硅层
3. Formation of silicon dioxide layers at low temperatures (150-400℃) by atmospheric pressure plasma oxidation of silicon [J] . H. Kakiuchi, H. Ohmi, M. Harada, Science and Technology of Advanced Materials . 2007,第3期

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4. The Relation of Temperature Distribution on Silicon Wafer with Furnace Temperature and Gas Flow During Thermal Dry Oxidation Process [C] . A. H. Azman, S. Norhafiezah, R. M. Ayub, Malaysia-Japan International Conference on Nanoscience, Nanotechnology and Nanoengineering . 2015

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7. Growth of Oxides Formed on TiAl and FeAl during High Temperature Oxidation at Low Oxygen Partial Pressures [O] . Yoshinori Murata, Yutaka Shimamura, Takayuki Ishida, 1997

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Low Temperature Thermal Oxidation of Silicon by Dry Oxygen Pressure above 1 Atm.

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