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首页> 美国政府科技报告 >High Efficiency, Room Temperature Mid-Infrared Semiconductor Laser Development for IR Countermeasures
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High Efficiency, Room Temperature Mid-Infrared Semiconductor Laser Development for IR Countermeasures

机译：高效率，室温中红外半导体激光器的红外对策研究

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This purpose of this grant focused on the optical and electronic characterization and fabrication of antimonide-based semiconductor lasers for infrared applications. Recent results with Optical Pumping Injection Cavity (OPIC) lasers includes >4 micrometer emission from a broadband laser and the measurement of spatial and temporal beam profiles. From August 2006 through December of 2007, the work was expanded to include the development of plasma etch processes in an Oxford Instruments 100 ICP 180 System for ZnO layers and the definition of antimonide laser structures. The laser structures were etched in a 25% BC13 / 75% Ar chemistry (5 seem BC13 and 15 seem argon) at 15 mTorr, 400W ICP, and 70W RIE power, with an etch rate of 300 nm/min. Epitaxial ZnO layers were plasma etched using BC13/SF(6) gas mixtures. Etch rates were studied as a function of gas composition, ICP coil power and RF power. The ZnO etch rate in pure BC1(3) at a pressure of 10 mTorr, RF power of 350W, and ICP power of 1000W was approx. 1175 A/min (-1000V bias). The etch rate increased with increasing SF(6) percentage in the flow, and for the same conditions in pure SF(6) the etch rate was approx. 1350 A/min (-820V bias).

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