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Final Report: Research Area 4: Electronics: Study of defect levels in InAs/InAsSb type-II Superlattice Using Pressure Dependent Photoluminescence.

机译：最终报告：研究领域4：电子学：使用压力相关光致发光研究Inas / Inassb II型超晶格中的缺陷水平。

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年度 2015
页码 1-15
总页数 15
原文格式 PDF
正文语种 eng
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关键词
Electronics; Defect levels; T2SL; Pressure-dependent photoluminescence;

机译：电子学;缺陷水平; T2sL;压力依赖性光致发光;

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专利

1. Electronic band structure of InAs/InAsSb type-II superlattice for HOT LWIR detectors [J] . T. Manyk, K. Michalczewski, K. Murawski, Results in Physics . 2018,第1期

机译：HOT LWIR探测器的InAs / InAsSb II型超晶格的电子能带结构
2. Evidence for a defect level above the conduction band edge of InAs/InAsSb type-Ⅱ superlattices for applications in efficient infrared photodetectors [J] . A. D. Prins, M. K. Lewis, Z. L. Bushell, Applied Physics Letters . 2015,第17期

机译：在高效红外光电探测器中应用的InAs / InAsSb II型超晶格的导带边缘以上的缺陷水平的证据
3. Mid-wavelength infrared high operating temperature pBn photodetectors based on type-II InAs/InAsSb superlattice [J] . Donghai Wu, Jiakai Li, Arash Dehzangi, AIP Advances . 2020,第2期

机译：基于II型INAS / INASSB超晶格的中波长红外高工作温度PBN光电探测器
4. Photoluminescence study of carrier recombination processes in InAs/InAsSb type-II superlattices [C] . Zhi-Yuan Lin, Jin Fan, Shi Liu, Infrared Technology and Applications . 2015

机译：INAS / INASSB II型超晶格中载体重组过程的光致发光研究
5. Transport in Mid-Wavelength Infrared (MWIR) p- and n-Type InAsSb and InAs/InAsSb Type-II Strained Layer Superlattices (T2SLs) for Infrared Detection [D] . Casias, Lilian K. 2019

机译：在中波长红外线（MWIR）P-and N型INASSB和INAS / INASSB Type-II紧张层超大图格（T2SL）用于红外检测
6. Dark current reduction in microjunction-based double electron barrier type-II InAs/InAsSb superlattice long-wavelength infrared photodetectors [O] . Romain Chevallier, Abbas Haddadi, Manijeh Razeghi -1

机译：基于微结的双电子势垒II型InAs / InAsSb超晶格长波长红外光电探测器的暗电流降低
7. Evidence for a defect level above the conduction band edge of InAs/InAsSb type-II superlattices for applications in efficient infrared photodetectors [O] . Prins, AD, Lewis, MK, Bushell, ZL, 2015

机译：在高效红外光电探测器中应用的InAs / InAsSb II型超晶格的导带边缘以上的缺陷水平的证据

Final Report: Research Area 4: Electronics: Study of defect levels in InAs/InAsSb type-II Superlattice Using Pressure Dependent Photoluminescence.

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