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首页> 美国政府科技报告 >Atomically Smooth Epitaxial Ferroelectric (Piezoelectric) Thin Films for the Development of a Nonvolatile, Ultrahigh Density, Fast, Low Voltage, Radiation-Hard Memory
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Atomically Smooth Epitaxial Ferroelectric (Piezoelectric) Thin Films for the Development of a Nonvolatile, Ultrahigh Density, Fast, Low Voltage, Radiation-Hard Memory

机译：用于开发非易失性，超高密度，快速，低电压，辐射 - 硬核存储器的原子光滑外延铁电（压电）薄膜

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摘要

The goal of this research program is to develop atomically smooth, nanostructured, single crystalline, epitaxial complex oxide thin films as the basic building block for a nonvolatile, ultrahigh density, fast, low voltage, radiation-hard memory. Oxide materials exhibit a broad diversity of behavior: transport properties that include superconducting, metallic, semiconducting and insulating ground states; magnetic properties ranging from ferromagnetism and colossal magnetoresistance to antiferromagnetism; and dielectric properties ranging from high-k insulating behavior to ferroelectricity, piezoelectricity, and pyroelectricity. The chemical and structural similarity of perovskite oxides makes it possible to combine these various functionalities into epitaxial heterostructures. In this work, the crystallinity and surface quality of epitaxial films and the quality of the interfaces between different oxides are important factors determining device performance.

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