• 主题
高级搜索  >
历史搜索 清空历史
首页> 美国政府科技报告 >Ultra-Sensitive Laser-Ionization for Real-Time Analysis-Control (ULTRA) of Silicon-MBE
【24h】

Ultra-Sensitive Laser-Ionization for Real-Time Analysis-Control (ULTRA) of Silicon-MBE

机译：用于silicon-mBE的实时分析控制（ULTRa）的超灵敏激光电离

获取原文
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

The objective of the ultra-sensitive Laser-Ionization for Real-Time Analysis Control (ULTRA) program was to develop and advanced growth diagnostics instrument for molecular beam epitaxy (MBE) systems which will provide date during material deposition of growth species fluxes and epitaxial growth rate in the most non-intrusive manner possible. This program was a cooperative 'team' effort between SVT Associates and researchers at the University of Colorado, Boulder and the University of California, Los Angeles. In this report we will discuss the progress made in specific tasks outlined for this three year program. The highlights of this program are the following Optimized Ultra Tool by implementation of high quality laser and optics: factor of five increase in 9th harmonic (118nm) generation; low cost atomic resonance lamps examined as alternative VUV source; optimization of Time-of-Flight (TOF) hardware; quantification of the detection efficiency of flux species. Implemented Sensor Suite for MBE Process: implementation of prototype ULTRA on deposition systems; development of optical scattering and advanced pyrometry tools; interface- capability to process automation software control. Developed Fabrication Process of Nano-structures: surface dynamics study of GaAs homoepitaxy; InAs quantum dot growth on GaAs; SiGe nano-structure fabrication as function of flux and temperature; investigation of the effect of surfactants.

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号