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MBE Growth and Characterization of Zincblende GaN and GaN/AlN structures

机译：Zincblende GaN和GaN / alN结构的mBE生长和表征

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This Program includes fundamental studies of Molecular beam epitaxial (MBE) growth of GaN and its related alloys and heterostructures. In additions, the optical and electrical properties of resultant materials were measured using a variety of spectroscopic techniques. The optical properties concentrated on optically-pumped stimulated emission and laser action in GaN/AlGaN heterostructures. The objective was to better understand the underlying physics of MBE growth, and the optical and electrical properties for GaN-based device application. 1.

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Song, J. J. ; Hauenstein, R. J.;
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年度 1997
页码 1-37
总页数 37
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Zinc sulfides; Nitrides; Aluminum; Molecular beam epitaxy; Gallium nitrides; Emission; Optical properties; Stimulation(General); Crystal structure; Air force research; Spectroscopy; Optical materials; Epitaxial growth; Alloys; Lasers; Electrical properties; Heterogeneity; Molecular structure; Optical pumping;

机译：硫化锌;氮化物;铝;分子束外延;氮化镓;发射;光学性质;刺激（通用）;晶体结构;空气研究;光谱学;光学材料;外延生长;合金;激光;电学性质;异质性;分子结构;光泵浦;

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专利

1. Characterizations of GaN films and GaN/AlN super-lattice structures grown on vicinal sapphire (0001) substrates by RF-MBE [J] . Shen XQ, Shimizu M, Yamamoto T, Journal of Crystal Growth . 2005,第1a4期

机译：RF-MBE对在邻近蓝宝石（0001）衬底上生长的GaN膜和GaN / AlN超晶格结构进行表征
2. The growth of cubic GaN film on GaAs(100) using AlN/GaN ordered alloy by MBE - the new approach of high quality cubic GaN [J] . A. Shigemori, J. Shike, R. Kimura, 電子情報通信学会技術研究報告. レ-ザ·量子エレクトロニクス. Lasers and Quantum Electronics . 2002,第117期

机译：MBE用AlN / GaN有序合金在GaAs（100）上生长立方GaN膜-高质量立方GaN的新方法
3. The growth of cubic GaN film on GaAs(100) using AlN/GaN ordered alloy by MBE - the new approach of high quality cubic GaN [J] . A. Shigemori, J. Shike, R. Kimura, 電子情報通信学会技術研究報告. 電子デバイス. Electron Devices . 2002,第114期

机译：MBE用AlN / GaN有序合金在GaAs（100）上生长立方GaN膜-高质量立方GaN的新方法
4. GaN/AlN multiple quantum well structures grown by MBE on GaN templates for 1.55 μm intersubband absorption [C] . T. Aggerstam, T.G. Andersson, P. Holmstroem, Quantum Sensing and Nanophotonic Devices IV; Proceedings of SPIE-The International Society for Optical Engineering; vol.6479 . 2007

机译：MBE在GaN模板上通过MBE生长的GaN / AlN多量子阱结构，可吸收1.55μm的子带
5. MBE growth of GaN heterostructures for high performance HEMTs [D] . Faria, Faiza Afroz 2015

机译：用于高性能HEMT的GaN异质结构的MBE生长
6. Band offsets of non-polar A-plane GaN/AlN and AlN/GaN heterostructures measured by X-ray photoemission spectroscopy [O] . Ling Sang, Qin Sheng Zhu, Shao Yan Yang, 2014

机译：X射线光发射光谱法测量的非极性A面GaN / AlN和AlN / GaN异质结构的能带偏移
7. The effect of GaN thickness inserted between two AlN layers on the transport properties of a lattice matched AlInN/AlN/GaN/AlN/GaN double channel heterostructure [O] . Tülek R., Arslan E., Bayrakli A., Turhan S., Gökden S., Duygulu Ö., Kaya A.A., Firat T., Teke A., Özbay E. 2014

机译：插入在两个AlN层之间的GaN厚度对晶格匹配的AlInN / AlN / GaN / AlN / GaN双通道异质结构的输运性能的影响

MBE Growth and Characterization of Zincblende GaN and GaN/AlN structures

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