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Analysis of the Large-Signal Characteristics of InP/TnGaAs-Based OptoelectronicPreamplifiers

机译：Inp / TnGaas基光电放大器的大信号特性分析

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摘要

A model for soft breakdown effects in InP/ In GaAs-based single HBT's isdeveloped. The effects of large-signal excitation on the operational characteristics of optoelectronic preamplifiers, such as the transducer and transimpedance gain of individual transistors, are addressed. These effects depend on optoelectronic integrated-circuit (OEIC) design and are associated with self-bias variations due to input power levels. Cascode designs are relatively immune to these effects, whereas basic coupled amplifiers are more sensitive for

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作者
Samelis, A.; Pavlidis, D.; Chandrasekhar, S.; Lunardi, L.;
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年度 1996
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总页数 8
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Preamplifiers; Electrooptics; Coupling(Interaction); Input; Integrated circuits; Power; Amplifiers; Reprints;

机译：前置放大器;电光学;耦合（相互作用）;输入;集成电路;功率;放大器;重印;

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专利

1. Analysis of Quantum-Dot Size Effect on Dynamic and Modulation Characteristics of InAS/InP (311) B QD-Laser Under Large-Signal Modulation [J] . Rajaei Esfandiar, Kayhani Kaveh, Borji Mahdi Ahmadi Journal of Nanoelectronics and Optoelectronics . 2017,第10期

机译：量子点尺寸对大信号调制下INAS / INP（311）B QD激光动态调制特性的影响
2. Large-signal characteristics of InP-based heterojunction bipolar transistors and optoelectronic cascode transimpedance amplifiers [J] . Samelis A., Pavlidis D. IEEE Transactions on Electron Devices . 1996,第12期

机译：基于InP的异质结双极晶体管和光电共源共栅跨阻放大器的大信号特性
3. Analysis of large-signal dynamic characteristics of 10-Gb/s tunable distributed Bragg reflector lasers integrated with electroabsorption modulator and semiconductor optical amplifier based on the time-dependent transfer matrix method [J] . Yonggyoo Kim, Jichai Jeong IEEE Journal of Quantum Electronics . 2003,第10期

机译：基于时变传递矩阵法的集成电吸收调制器和半导体光放大器的10 Gb / s可调分布式布拉格反射器激光器的大信号动态特性分析
4. Large-signal characteristics of InP-based heterojunction bipolar transistors and their use in optoelectronic preamplifier design [C] . Samelis, A., Pavlidis, Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on . 1995

机译：基于InP的异质结双极晶体管的大信号特性及其在光电前置放大器设计中的应用
5. CHARACTERISTICS OF MAGNETICALLY FOCUSED LARGE-SIGNAL TRAVELING-WAVE AMPLIFIERS. [D] . DETWEILER, HARRY KENNETH. 1968

机译：磁聚焦大信号行波放大器的特性。
6. Raman Spectroscopic Characterizations of Self-Catalyzed InP/InAs/InP One-Dimensional Nanostructures on InP(111)B Substrate using a Simple Substrate-Tilting Method [O] . Jeung Hun Park, Choong-Heui Chung 2019

机译：使用简单的基板倾斜方法在InP（111）B基板上自催化InP / InAs / InP一维纳米结构的拉曼光谱表征
7. Large-signal modeling of multi-finger InP DHBT devices at millimeter-wave frequencies [O] . Johansen Tom Keinicke, Midili Virginio, Squartecchia Michele, 2017

机译：毫米波频率的多指Inp DHBT设备的大信号建模
8. Calculation of the Capacitance-Voltage Characteristics of p+-InP/n-InP/n-InGaAsP Photodiodes [R] . Donnelly, J. P. 1981

机译：p + -Inp / n-Inp / n-InGaasp光电二极管的电容 - 电压特性计算

Analysis of the Large-Signal Characteristics of InP/TnGaAs-Based OptoelectronicPreamplifiers

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