首页>
外国专利>
STATISTICAL ANALYSIS METHOD FOR TECHNOLOGICAL PARAMETERS OF GaN DEVICES BASED ON LARGE-SIGNAL EQUIVALENT CIRCUIT MODEL
STATISTICAL ANALYSIS METHOD FOR TECHNOLOGICAL PARAMETERS OF GaN DEVICES BASED ON LARGE-SIGNAL EQUIVALENT CIRCUIT MODEL
展开▼
机译：基于大信号等效电路模型的GaN器件技术参数统计分析方法
展开▼
页面导航
摘要
著录项
相似文献
摘要
A statistical analysis method for technological parameters of GaN devices based on equivalent circuit model is provided. The analysis method includes the following steps: establishing a GaN device small-signal equivalent circuit model, and extracting small-signal model parameters; establishing a GaN device large-signal equivalent circuit model, and extracting large-signal model parameters; tuning and optimizing the large-signal model parameters by targeting the measured microwave characteristics of the device; and extracting technological parameters of GaN devices in multiple batches based on the established large-signal model, and statistically analyzing the technological parameters. In the method for statistically analyzing technological parameters of GaN devices, first, a GaN device small-signal equivalent circuit model is established, a GaN device large-signal equivalent circuit model associated with technological parameters is then established, and the statistical distribution of the technological parameters is eventually obtained by modeling of devices in multiple batches.
展开▼
