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首页> 外文期刊>IEEE Transactions on Microwave Theory and Techniques >Physics-based large-signal sensitivity analysis of microwave circuits using technological parametric sensitivity from multidimensional semiconductor device models
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Physics-based large-signal sensitivity analysis of microwave circuits using technological parametric sensitivity from multidimensional semiconductor device models

机译:使用多维半导体器件模型中的技术参数灵敏度对微波电路进行基于物理的大信号灵敏度分析

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摘要

The authors present an efficient approach to evaluate the large-signal (LS) parametric sensitivity of active semiconductor devices under quasi-periodic operation through accurate, multidimensional physics-based models. The proposed technique exploits efficient intermediate mathematical models to perform the link between physics-based analysis and circuit-oriented simulations, and only requires the evaluation of dc and ac small-signal (dc charge) sensitivities under general quasi-static conditions. To illustrate the technique, the authors discuss examples of sensitivity evaluation, statistical analysis, and doping profile optimization of an implanted MESFET to minimize intermodulation which makes use of LS parametric sensitivities under two-tone excitation.
机译:作者提出了一种有效的方法,可以通过精确的,基于多维物理的模型来评估准周期操作下有源半导体器件的大信号(LS)参数灵敏度。所提出的技术利用有效的中间数学模型来执行基于物理学的分析和面向电路的仿真之间的链接,并且仅需要在一般的准静态条件下评估直流和交流小信号(直流电荷)灵敏度。为了说明该技术,作者讨论了灵敏度评估,统计分析和掺杂MESFET掺杂轮廓优化的示例,以最小化互调,该互调利用了两音激励下的LS参数灵敏度。

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