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METHOD FOR STATISTICALLY ANALYZING PROCESS PARAMETERS OF GAN DEVICE BASED ON LARGE-SIGNAL EQUIVALENT CIRCUIT MODEL
METHOD FOR STATISTICALLY ANALYZING PROCESS PARAMETERS OF GAN DEVICE BASED ON LARGE-SIGNAL EQUIVALENT CIRCUIT MODEL
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机译：基于大信号等效电路模型的GAN设备工艺参数统计分析方法
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摘要
Provided is a method for analyzing process parameters based on a GaN device equivalent circuit model, comprising: step I: establishing a GaN device small-signal equivalent circuit model to extract small-signal model parameters; step II: establishing a GaN device large-signal equivalent circuit model to extract large-signal model parameters, i.e., nonlinear current source model parameters and nonlinear capacitor model parameters; step III: tuning and optimizing the large-signal model parameters with the goal of measured microwave properties of the device; and step IV: extracting process parameters of multiple batches of GaN devices based on the established large-signal model, and statistically analyzing the process parameters. By means of the method for statistically analyzing process parameters of a GaN device model, first establishing a GaN device small-signal equivalent circuit model, then establishing a GaN device large-signal equivalent circuit model associated with process parameters, and finally modeling multiple batches of devices to obtain statistical distribution of the process parameters are beneficial to device yield analysis and process parameter optimization.
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