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X-ray diffraction study of GaSb/AlSb strained-layer-superlattices grown on miscut (100) substrates

机译：在错切（100）衬底上生长的Gasb / alsb应变层超晶格的X射线衍射研究

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A series of superlattices were grown by molecular beam epitaxy on (100) GaSb substrates which had been miscut by 2, 3, and 4 degrees toward the direction. These superlattices were then studied by scanning all possible (444) or (511) (asymmetric) reflections with high resolution multiple-crystal x-ray diffractometry. In addition, the (400) (quasi-symmetric) reflection was scanned. From peak splittings we extracted mismatch and tilt parameters for the epitaxial unit cell. We compared our results for the non-tetragonal component of the distortion ot calculations based on the coherent strain model of Hornstra and Bartels (J. Cryst. Growth 44,513 (1978)). We find that this model which was developed for epitaxial growth on a general (hkl) plane also describes our results for growth on vicinal (100) planes. The resolution of our data is sufficient to establish that the distortion was not purely tetragonal. A monoclinic unit cell symmetry adequately describes our results.

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Macrander, A. T.; Schwartz, G. P.; Guiltieri, G. J.; Gilmer, G.;
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年度 1991
页码 1-12
总页数 12
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Gallium Antimonides ; Substrates ; Aluminium Compounds ; Antimonides ; Crystal Growth ; Interfaces ; Molecular Beam Epitaxy ; Superlattices ; X-Ray Diffraction;

机译：锑化镓;基质;铝化合物;锑化物;晶体生长;界面;分子束外延;超晶格; X射线衍射;

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专利

1. Spatially resolved x-ray diffraction study of GaSb layers grown laterally on SiO_2-masked GaAs substrates [J] . A. Wierzbicka, J. Z. Domagala, Z. R. Zytkiewicz Journal of Applied Physics . 2009,第4期

机译：在SiO_2掩蔽的GaAs衬底上横向生长的GaSb层的空间分辨X射线衍射研究
2. X-ray diffraction analyses of RF sputtered Ba_(0.6)Sr_(0.4)TiO_3 thin films grown on Pt/Ti/LaAlO_3 (100) substrates [J] . Hongwei Chen, Yu Tan, Hong Ji, Journal of materials science . 2014,第4期

机译：在Pt / Ti / LaAlO_3（100）衬底上生长的RF溅射Ba_（0.6）Sr_（0.4）TiO_3薄膜的X射线衍射分析
3. Nitrogen incorporation into strained (In, Ga) (As, N) thin films grown on (100), (511), (411), (311), and (111) GaAs substrates studied by photoreflectance spectroscopy and high-resolution x-ray diffraction [J] . J. lbanez, R. Kudrawiec, J. Misiewicz, Journal of Applied Physics . 2006,第9期

机译：通过光反射光谱法和高分辨率x-射线研究了在（100），（511），（411），（311）和（111）GaAs衬底上生长的应变（In，Ga）（As，N）薄膜中的氮掺入射线衍射
4. X-ray diffraction study of GaSb/AlSb strained-layer-superlattices grown on miscut (100) substrates [C] . Albert T. Macrander, Argonne National Labs., Argonne, X Rays in Materials Analysis II: Novel Applications and Recent Developments . 1991

机译：在错切（100）衬底上生长的GaSb / AlSb应变层超晶格的X射线衍射研究
5. Determination via luminescence spectroscopy and x-ray diffraction of the strain and composition of GaN and Al(x)Ga(1-x)N thin films grown on 6H-SiC(0001) substrates. [D] . Perry, William George. 1997

机译：通过发光光谱和X射线衍射测定在6H-SiC（0001）衬底上生长的GaN和Al（x）Ga（1-x）N薄膜的应变和组成。
6. The structural and optical properties of GaSb/InGaAs type-II quantum dots grown on InP (100) substrate [O] . Zhang Shuhui, Wang Lu, Shi Zhenwu, 2012

机译：在InP（100）衬底上生长的GaSb / InGaAs II型量子点的结构和光学性质
7. X-ray diffraction study of GaSb/AlSb strained-layer-superlattices grown on miscut (100) substrates [O] . Albert T. Macrander, Gary P. Schwartz, Gregory J. Gualteri, 1991

机译：<标题>气体/ ALSB的X射线衍射研究 - 在MISCUT（100）底物上生长的升降层 - 超晶格
8. X-ray diffraction study of GaSb/AlSb strained-layer-superlattices grown on miscut (100) substrates [R] . Macrander, A T, Schwartz, G P, Guiltieri, G J, 1991

机译：在错切（100）衬底上生长的Gasb / alsb应变层超晶格的X射线衍射研究

X-ray diffraction study of GaSb/AlSb strained-layer-superlattices grown on miscut (100) substrates

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