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首页> 美国政府科技报告 >Development of free-electron lasers for xuv projection lithography.
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Development of free-electron lasers for xuv projection lithography.

机译：用于xuv投影光刻的自由电子激光器的开发。

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Future rf-linac-driven FELs, operating in the range from 4 nm to 100 nm, could be excellent exposure tools for extending the resolution limit of projection optical lithography to (le)0.1 (mu)m and with adequate total depth of focus (1 to 2 (mu)m). When operated at a moderate duty rate of (ge)1%, XUV FELs should be able to supply sufficient average power to support high-volume chip production. Recent developments of the electron beam, magnetic undulator, and resonator mirrors are described which raise our expectation that FEL operation below 100 nm is almost ready for demonstration. Included as a supplement is a review of initial design studies of the reflecting XUV projection optics, fabrication of reflection masks, characterization of photoresists, and the first experimental demonstrations of the capability of projection lithography with 14-nm radiation to produce lines and spaces as small as 0.05 (mu)m. 88 refs., 10 figs.

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