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Single Crystal Integration of an Optical Interference Filter and Photodiode

机译：光学干涉滤光片和光电二极管的单晶集成

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An all-semiconductor, single-crystal, integrated optical detector has been produced for the visible, in which a photodiode and an optical interference filter (high reflector) were integrated in a single growth run by metal-organic chemical vapor deposition. In this structure, the high reflector is both optically and electrically active, being composed of alternating, doped, quarter-wave layers of GaP and GaAs/sub 0.2/P/sub 0.8/. The diode is a p-n junction superlattice composed of much thinner layers of GaP and GaAs/sub 0.35/P/sub 0.65/. The photodiode responds to light from 460 to 600 nm, while the high reflector rejects a narrow 10 nm band centered near 500 nm. The rejection factor is approx.7 db for these prototype devices. The quantum efficiency, linearity, temperature and bias dependence of the spectral response are reported. (ERA citation 12:001398)

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