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Atomic Mechanisms of Oxide Nucleation and Growth at the Aluminum/Oxide Interface: A High-Resolution Transmission Electron Microscopy Study

机译:铝/氧化物界面氧化物成核和生长的原子机制:高分辨率透射电子显微镜研究

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Highly detailed analyses of the crystallographic aspects required for nucleation and growth of aluminum oxide at the metal/oxide interface were carried out using high-resolution transmission electron microscopy. These analyses led to the modelling of the mechanisms of nucleation and growth at the atomic level. The oxides were formed by oxidizing aluminum in 1 atm air at either 500 or 600 deg C for times from 0.5 h to 4 weeks. In conjunction with computer simulation comparisons, the cross-sectional high-resolution transmission electron microscopy images reveal directly the atomic structure of the oxide, the base metal, and all internal interfaces. (ERA citation 11:004706)

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