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首页> 美国政府科技报告 >Electronic Properties of Amorphous Silicon Dioxide and Metallic Ions in Silicate Glasses. Annual Progress Report, November 1, 1980-October 30, 1981
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Electronic Properties of Amorphous Silicon Dioxide and Metallic Ions in Silicate Glasses. Annual Progress Report, November 1, 1980-October 30, 1981

机译：硅酸盐玻璃中非晶二氧化硅和金属离子的电子特性。年度进展报告，1980年11月1日至1981年10月30日

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摘要

This report describes the research progress during the fiscal year 11/1/80 to 10/30/81 under the DOE contract DE-AC02-79ER10462. The program is a continuing project started 7/1/79 to study the electronic structures of amorphous silicon dioxide, silicate glasses and silicon based ceramic systems using theoretical calculations in conjunction with structural modelling. During this period many important results have been obtained. Of particular significance are: (1) the first microscopic calculation of localized electron states in a real disordered solid and its theoretical estimation of the mobility edge; and (2) the first calculation of band structures of silicon nitrides and silicon oxynitride.

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