首页> 美国政府科技报告 >Investigation of States in exp 30 P Via the exp 30 Si( Exp 3 He,T) exp 30 P Reaction at 30 MeV
【24h】

Investigation of States in exp 30 P Via the exp 30 Si( Exp 3 He,T) exp 30 P Reaction at 30 MeV

机译:通过exp 30 si(Exp 3 He,T)exp 30 p反应在30 meV下研究exp 30 p中的状态

获取原文

摘要

The exp 30 Si( exp 3 He,t) exp 30 P reaction has been measured for about 100 levels in exp 30 P with Esub(x)<8.8 MeV. Little selectivity in the population of states has been observed. For 75 levels angular distributions have been analysed using a 'fingerprint method' by determining the L-value from a comparison in shape with transition to states with known Jsup( pi ). For possible mixed L-transitions a dominance of the higher L-value is observed for almost all cases. Coulomb displacement energy calculations utilizing shell-model wave functions have been used to identify T=1 states. (Atomindex citation 12:628867)

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号