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首页> 美国政府科技报告 >Silicon-on-Ceramic Coating Process. Silicon Sheet Growth Development for the Large-Area Silicon Sheet and Cell Development Tasks of the Low-Cost Silicon Solar Array Project. Quarterly Report No. 9, March 29--June 30, 1978
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Silicon-on-Ceramic Coating Process. Silicon Sheet Growth Development for the Large-Area Silicon Sheet and Cell Development Tasks of the Low-Cost Silicon Solar Array Project. Quarterly Report No. 9, March 29--June 30, 1978

机译：硅 - 陶瓷涂层工艺。用于大面积硅片的硅片生长开发和低成本硅太阳能电池阵列项目的电池开发任务。 1978年3月29日至6月30日第9号季度报告

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This research program began on 21 October 1975. Its purpose is to investigate technical and economic feasibility of producing solar-cell-quality sheet silicon by coating inexpensive ceramic substrates with a thin layer of polycrystalline silicon. The coating methods to be developed are directed toward minimum-cost process for producing solar cells with a terrestrial conversion efficiency of 12% or greater. By applying a graphite coating to one face of a ceramic substrate, molten silicon can be caused to wet only that graphite-coated face and produce uniform thin layers of large-grain polycrystalline silicon; thus, only a minimal quantity of silicon is consumed. A dip-coating method for putting silicon on ceramic (SOC) has been shown to produce solar-cell-quality sheet silicon. This method and a continuous coating process also being investigated have excellent scale-up potential which offers an outstanding cost-effective way to manufacture large-area solar cells. The dip-coating investigation has shown that, as the substrate is pulled from the molten silicon, crystallization continues to occur from previously grown silicon. Therefore, as the substrate length is increased (as would be the case in a scaled-up process), the expectancy for larger crystallites increases. A variety of ceramic materials have been dip-coated with silicon. The investigation has shown that mullite substrates containing an excess of SiO sub 2 best match the thermal expansion coefficient of silicon and hence produce the best SOC layers. With such substrates, smooth and uniform silicon layers 25 cm exp 2 in area have been achieved with single-crystal grains as large as 4 mm in width and several cm in length. Crystal length is limited by the length of the substrate. The thickness of the coating and the size of the crystalline grains are controlled by the temperature of the melt and the rate at which the substrate is withdrawn from the melt. Results and accomplishments during the quarter are presented. (ERA citation 04:007671)

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