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Electron Microscopy Studies of Defects in Boron-Sintered Cubic Silicon Carbide

机译：硼烧结立方碳化硅缺陷的电子显微镜研究

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Intra-granular defects in boron-sintered cubic silicon carbide have been studied using transmission electron microscopy. Planar faults and dislocations were examined. Closely spaced faults permeating a majority of grains were observed and analyzed, but the Burgers vectors of the terminating partial dislocations could not be uniquely determined since the faults extended to the grain boundaries. Thus, the faults could not be distinguished as growth or shear type. Isolated faults were also observed and characterized as extrinsic. Dislocation dipoles and networks of other dislocations were observed. These were likely to have been formed by deformation at the high sintering temperatures. A possibility remains that the networks observed were present in the crystallites prior to sintering. (ERA citation 02:060442)

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de los Santos Dizon, F.;
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年度 1977
页码 1-63
总页数 63
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Boron ; Silicon carbides ; Defects ; Sintered materials ; Crystal structure ; Dislocations ; Electron microscopy ; Grain boundaries;

机译：硼;碳化硅;缺陷;烧结材料;晶体结构;位错;电子显微镜;晶界;

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Electron Microscopy Studies of Defects in Boron-Sintered Cubic Silicon Carbide

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