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首页> 美国政府科技报告 >Characterization of Epitaxial Film Silicon Solar Cells Grown on Seeded Display Glass.
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Characterization of Epitaxial Film Silicon Solar Cells Grown on Seeded Display Glass.

机译：在种子显示器玻璃上生长的外延膜硅太阳能电池的表征。

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The commercial photovoltaic market continues to be dominated by crystalline silicon wafer technology. However, epitaxial film-silicon on seeded low-cost substrates (epi on seed) is a viable technology that could provide reduced manufacturing costs without sacrificing efficiency. Our group is exploring growth of epitaxial films on low-cost, seeded-substrates by hot-wire CVD (HWCVD). HWCVD allows nearly defect free epitaxial growth on wafers at deposition rates > 1.8 Yim/min nearly 300 to 400C below typical chemical vapor deposition epitaxy. The lower HWCVD growth temperature allows low-cost, low-temperature substrates, such as display glass, to be used as the substrate for large area crystal film silicon solar modules. Though NREL has investigated a variety of homo- and heteroepitaxial seeds on glass substrates, this contribution will focus mainly on layer-transfer (LT) c-Si films oxide-bonded to Corning EAGLE XG glass (hereafter SiOG). Our study explores the influence of the surface preparation of the seed layer to obtain low-defect density epitaxial films, and compares material quality and device characterization between SiOG and wafer-based devices.

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