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Stark effects on band gap and surface phonons of semiconductor quantum dots in dielectric hosts

机译：电介质主体中半导体量子点的带隙和表面声子的斯塔克效应

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The authors have investigated quantum-confined Stark effect (QCSE) on GaAs and CdSe nanocrystals and the electric field effect on surface phonons of GaAs nanocrystals isolated in sapphire substrates. For a strongly quantum-confined system, GaAs quantum dots illustrated no exciton energy shift. When the excitons are weakly confined in CdSe, a (approximately) 2 meV red-shift was observed. On the other hand, the results of the electric field effect on surface phonon are dramatic both phonon oscillator strength and frequency. As the strength of the electric field increases, the total intensity of the surface phonon decreases. At the same time, an additional peak was also observed at 277 cm(sup (minus)1), which is about 3 cm(sup (minus)1) above the center frequency of the surface phonon mode of GaAs nanocrystals embedded in a sapphire host.

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Mu, R. ; Ueda, A. ; Tung, Y. S. ; Henderson, D. O. ; Zhu, J. G.;
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年度 1996
页码 1-7
总页数 7
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Cadmium Selenides; Gallium Arsenides; Absorption Spectra; Dielectric Materials; Energy Gap; Experimental Data; Infrared Spectra; Lattice Vibrations; Optical Properties; Phonons; Spectral Shift; Stark Effect; Tables(data);

机译：硒化镉;砷化镓;吸收光谱;介电材料;能隙;实验数据;红外光谱;晶格振动;光学性质;声子;光谱漂移;斯塔克效应;表（数据）;

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专利

1. SURFACE-PHONON CHARACTERIZATION OF INP, GAP AND GAAS QUANTUM DOTS CONFINED IN DIELECTRIC HOSTS [J] . Henderson DO., Tung YS., Mu R., Journal of Physics, D. Applied Physics: A Europhysics Journal . 1997,第10期

机译：介电常数限制的INP，GAP和GAAS量子点的表面声子表征
2. Effects of the non equilibrium phonons and the band non parabolicity on the small signal high frequency AC mobility in narrow gap semiconductors in the extreme quantum limit at low temperatures [J] . Basak S, Santra K, Sarkar CK Journal of Low Temperature Physics . 2007,第5a6期

机译：非平衡声子和能带非抛物线型对窄间隙半导体在低温极限量子极限下小信号高频交流迁移率的影响
3. Effects of the Non Equilibrium Phonons and the Band Non Parabolicity on the Small Signal High Frequency ac Mobility in Narrow Gap Semiconductors in the Extreme Quantum Limit at Low Temperatures [J] . S. Basak, K. Santra, C. K. Sarkar Journal of Low Temperature Physics . 2007,第5a6期

机译：非平衡声子和能带非抛物线型对低温下极端量子极限下窄间隙半导体中小信号高频交流迁移率的影响
4. Quantum-confined and pseudo Stark effects in the semiconductor conical quantum dot [C] . K. G. Dvoyan, A. A. Tshantshapanyan, B. Vlahovic, Nanophotonic materials XIV . 2017

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5. Valence electronic structure of semiconductor quantum dot and wide band gap oxide interfaces by ultraviolet photoelectron spectroscopy. [D] . Timp, Brooke Andrea. 2009

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6. Properties of nanocones formed on a surface of semiconductors by laser radiation: quantum confinement effect of electrons phonons and excitons [O] . Artur Medvid, Pavels Onufrijevs, Alexander Mychko 2011

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7. Stark effects on band gap and surface phonons of semiconductor quantum dots in dielectric hosts [O] . Mu, R., Ueda, A., Tung, Y.S., 1996

机译：电介质主体中半导体量子点的带隙和表面声子的斯塔克效应
8. Stark effects on band gap and surface phonons of semiconductor quantum dots in dielectric hosts [R] . Mu, R., Ueda, A., Tung, Y. S., 1996

机译：电介质主体中半导体量子点的带隙和表面声子的斯塔克效应

Stark effects on band gap and surface phonons of semiconductor quantum dots in dielectric hosts

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