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Structural and electrical characterization of highly-tetrahedral- coordinated diamond-like carbon films grown by pulsed-laser deposition

机译:通过脉冲激光沉积生长的高四面体配位类金刚石碳膜的结构和电学表征

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Highly tetrahedral-coordinated-amorphous-carbon (a-tC) films deposited by pulsed-laser deposition (PLD) on silicon substrates are studied. These films are grown at room-temperatures in a high-vacuum ambient, a-tC films grown in this manner have demonstrated stability to temperatures in excess of T = 1000 C, more than sufficient for any post-processing treatment or application. Film surfaces are optically smooth as determined both visually and by atomic-force microscopy. PLD growth parameters can be controlled to produce films with a range of sp(sup 2) - sp(sup 3) carbon-carbon bond ratios. Films with the highest yield of sp(sup 3) C-C bonds have high resistivity, with a dielectric permittivity constant (var epsilon) (approximately) 4, measured capacitively at low frequencies (1--100 kHz). These a-tC films are p-type semiconductors as grown. Schottky barrier diode structures have been fabricated.

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