EUV metrology of multilayer optics

机译：EUV多层光学计量学

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EUV metrology is central to the successful commercialization of EUV projection lithography. Metrology carried out at the EUV wavelength of 13 nm enables a gain of (approximately)50 in precision when translated from visible light wavelengths. It also uniquely measures wavefront errors due to lateral variations in the inherent phase shift upon reflection from the multilayer coating. The authors present the development of two metrology techniques: EUV Foucault and Ronchi tests.

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Ray-Chaudhuri, A. K. ; Stulen, R. H. ; Ng, W. ; Cerrina, F. ; Spector, S.;
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年度 1994
页码 1-12
总页数 12
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Geometrical Aberrations; Microelectronics; Optical Systems; Errors; Experimental Data; Extreme Ultraviolet Radiation; Fabrication; Feasibility Studies; Interferometry; Measuring Methods; Phase Shift; Specifications; Tables(Data);

机译：几何像差;微电子学;光学系统;误差;实验数据;极端紫外线辐射;制造;可行性研究;干涉测量;测量方法;相移;规格;表格（数据）;

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1. Metrology of Mo/Si multilayer mirrors at 13.5 nm with the use of a laser-produced plasma extreme ultraviolet (EUV) source based on a gas puff target [J] . Rakowski R, Bartnik A, Fiedorowicz H, Optica applicata . 2006,第4期

机译：Mo / Si多层镜在13.5 nm的计量，该激光使用了基于气团靶的激光产生等离子体超紫外线（EUV）源
2. Metrology of Mo/Si multilayer mirrors at 13.5 nm with the use of a laser-produced plasma extreme ultraviolet (EUV) source based on a gas puff target [J] . A. BARTNIK, H. FIEDOROWICZ, H. TICHA, Optica applicata . 2006,第4期

机译：Mo / Si多层镜在13.5 nm的计量，该激光使用了基于气团靶的激光产生等离子体超紫外线（EUV）源
3. Broadband multilayer optics for ultrafast EUV absorption spectroscopy with free electron laser radiation [J] . Corso A. J., Zuppella P., Principi E., Journal of optics . 2015,第2期

机译：宽带多层光学器件，用于带有自由电子激光辐射的超快EUV吸收光谱
4. Ex Situ Detection Limits of Contamination Metrology on EUV Multilayer Mirrors: A First Step Toward an In Situ Metrology Feasibility Assessment - (PPT) [C] . N. V. Edwards, Alain Diebold, Theodore Madey, International Extreme Ultra-Violet Lithography Symposium . 2005

机译：EUV多层镜中污染计量的原位检测限制：朝向原位计量可行性评估的第一步 - （PPT）
5. Extreme ultraviolet (EUV) holographic metrology for lithography applications. [D] . Lee, Sang Hun. 2000

机译：适用于光刻应用的极紫外（EUV）全息计量学。
6. The at-wavelength metrology facility for UV- and XUV-reflection and diffraction optics at BESSY-II [O] . F. Schäfers, P. Bischoff, F. Eggenstein, -1

机译：BESSY-II的用于紫外线和XUV反射和衍射光学的波长计量设施
7. Accelerated lifetime metrology of EUV multilayer mirrors in hydrocarbon environments [O] . S. B. Hill*a, N. S. Faradzheva, C. Tarrioa, 2014

机译：在烃类环境中EUV多层反射镜的加速寿命计量

EUV metrology of multilayer optics

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