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Electronic Properties of Deep-Level Defects in Proton Irradiated AlGaAs-GaAs Solar Cells

机译：质子辐照alGaas-Gaas太阳电池深层缺陷的电子特性

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Deep level transient spectroscopy and capacitance voltage techniques as well as analysis of the forward current voltage (I-V) characteristics and SEM-EIC data were carried out for proton irradiated GaAs solar cells over a wide range of proton energies and proton fluences. Defect and recombination parameters such as defect energy levels and density, carrier capture cross sections and lifetimes as well as diffusion lengths in the undoped n-GaAs LPE layers were determined. Good correlation between these defect parameters and solar cell performance parameters was obtained for GaAs solar cells irradiated by 200 and 290 KeV protons. It was found that 200 to 290 KeV protons will produce the most defects and damages to the GaAs solar cell structure used. The influence of the low temperature (200 to 400 C) periodic thermal annealing on the deep level defects and the performance of the 200 KeV proton irradiated cells is discussed.

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作者
Li, S. S.;
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年度 1981
页码 p.1-72
总页数 72
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Defects; Electrical properties; Gallium arsenides; Proton irradiation; Radiation damage; Solar cells; Aluminum gallium arsenides; Annealing; Electron recombination; Holes (Electron deficiencies); Semiconductor diodes; Temperature effects;

机译：缺陷;电性能;砷化镓;质子辐照;辐射损伤;太阳能电池;砷化铝镓;退火;电子复合;空穴（电子缺陷）;半导体二极管;温度效应;

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1. Investigation of defect properties in Cu(In,Ga)Se_2 solar cells by deep-level transient spectroscopy [J] . L.L. Kerr, Sheng S. Li, S.W. Johnston, Solid-State Electronics . 2004,第9期

机译：深度瞬态光谱研究Cu（In，Ga）Se_2太阳能电池的缺陷性质
2. A comparative study of electronic properties of the defects introduced in p-Si: (i) During electron beam deposition of Ti/Mo, (ii) by proton irradiation, and (iii) by electron irradiation [J] . Das AGM, Nyamhere C, Auret FD, Surface & Coatings Technology . 2009,第17a18期

机译：p-Si中引入的缺陷的电子性质的比较研究：（i）电子束沉积Ti / Mo期间，（ii）质子辐照，和（iii）电子辐照
3. Cell performance and defect behavior in proton‐irradiated lithium‐counterdoped n+p silicon solar cells [J] . Journal of Applied Physics . 1986,第6期

机译：质子辐照的锂掺杂n + p硅太阳能电池的电池性能和缺陷行为
4. Deep-level transient spectroscopy analysis of proton-irradiated n~+ /p InGaP solar cells [C] . N. Dharmarasu, M. Yamaguchi, A. Khan, 21st International Conference on Defects in Semiconductors (ICDS-21) Jul 16-20, 2001 Giessen, Germany . 2001

机译：质子辐照的n〜+ / p InGaP太阳能电池的深层瞬态光谱分析
5. Deep Level Defects in Advanced III-Nitride Semiconductors: Presence, Properties and Impact of Proton Irradiation [D] . Zhang, Zeng. 2016

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6. High Power UV-Light Irradiation as a New Method for Defect Passivation in Degraded Perovskite Solar Cells to Recover and Enhance the Performance [O] . Farzaneh Arabpour Roghabadi, Nasibeh Mansour Rezaei Fumani, Maryam Alidaei, -1

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Electronic Properties of Deep-Level Defects in Proton Irradiated AlGaAs-GaAs Solar Cells

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