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Ionized Dopant Concentrations at the Heavily Doped Surface of a Silicon Solar Cell

机译：硅太阳能电池重掺杂表面的电离掺杂浓度

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The metal-oxide-semiconductor (MOS) capacitance-voltage technique is used to determine ionized dopant concentrations at the heavily doped (n+) surface of a silicon solar cell. These data are combined with concentrations obtained by a bulk measurement method using successive layer re¬moval with measurements of Hall effect and resistivity. From the MOS measurements it is found that the ionized dopant concentration N has the value (1.4±0.1) ×l020 cm-3 at distances between 100 and 220 nm from the n+ surface. The bulk measurement technique yields average values of N over layers whose thickness is 2000 nm. Assuming a linear concentration variation near the sur¬face, the combined data indicate that the ionized dopant concentration is constant from the surface to a depth of 2000 nm. These results show that, at the high concentrations encountered at the n+ surface, the MOS C-V technique, when combined with a bulk measurement method, can be used to evaluate the effects of materials preparation methodologies on the surface and near surface charge concentrations of silicon solar cells.

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