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High-efficiency photovoltaics through mechanically stacked integration of solar cells based on the InP lattice constant

机译：通过基于InP晶格常数的太阳能电池的机械堆叠集成实现高效光伏

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摘要

Solar Energy is a clean and abundant energy source that can help reduce reliance on fossil fuels around which questions still persist about their contribution to climate and long-term availability. Monolithic triple-junction solar cells are currently the state of the art photovoltaic devices with champion cell efficiencies exceeding 40%, but their ultimate efficiency is restricted by the current-matching constraint of series-connected cells. The objective of this thesis was to investigate the use of solar cells with lattice constants equal to InP in order to reduce the constraint of current matching in multi-junction solar cells. This was addressed by two approaches: Firstly, the formation of mechanically stacked solar cells (MSSC) was investigated through the addition of separate connections to individual cells that make up a multi-junction device. An electrical and optical modelling approach identified separately connected InGaAs bottom cells stacked under dual-junction GaAs based top cells as a route to high efficiency. An InGaAs solar cell was fabricated on an InP substrate with a measured 1-Sun conversion efficiency of 9.3%. A comparative study of adhesives found benzocyclobutene to be the most suitable for bonding component cells in a mechanically stacked configuration owing to its higher thermal conductivity and refractive index when compared to other candidate adhesives. A flip-chip process was developed to bond single-junction GaAs and InGaAs cells with a measured 4-terminal MSSC efficiency of 25.2% under 1-Sun conditions. Additionally, a novel InAlAs solar cell was identified, which can be used to provide an alternative to the well established GaAs solar cell. As wide bandgap InAlAs solar cells have not been extensively investigated for use in photovoltaics, single-junction cells were fabricated and their properties relevant to PV operation analysed. Minority carrier diffusion lengths in the micrometre range were extracted, confirming InAlAs as a suitable material for use in III-V solar cells, and a 1-Sun conversion efficiency of 6.6% measured for cells with 800 nm thick absorber layers. Given the cost and small diameter of commercially available InP wafers, InGaAs and InAlAs solar cells were fabricated on alternative substrates, namely GaAs. As a first demonstration the lattice constant of a GaAs substrate was graded to InP using an InxGa1-xAs metamorphic buffer layer onto which cells were grown. This was the first demonstration of an InAlAs solar cell on an alternative substrate and an initial step towards fabricating these cells on Si. The results presented offer a route to developing multi-junction solar cell devices based on the InP lattice parameter, thus extending the range of available bandgaps for high efficiency cells.
机译：太阳能是一种清洁而丰富的能源，可以帮助减少对化石燃料的依赖，围绕化石燃料的问题仍然存在，有关化石燃料对气候和长期可用性的贡献。单片三结太阳能电池目前是最先进的光伏设备，其最佳电池效率超过40％，但其最终效率受到串联电池的电流匹配约束的限制。本文的目的是研究晶格常数等于InP的太阳能电池的使用，以减少多结太阳能电池中电流匹配的约束。这通过两种方法解决：首先，通过向构成多结器件的单个电池添加单独的连接，研究了机械堆叠式太阳能电池（MSSC）的形成。电学和光学建模方法将堆叠在基于双结GaAs的顶部电池下面的InGaAs底部电池分开连接，以此作为实现高效率的途径。在InP衬底上制造InGaAs太阳能电池，测得的1-Sun转换效率为9.3％。胶粘剂的一项比较研究发现，由于与其他候选胶粘剂相比，苯并环丁烯具有更高的导热性和折射率，因此它最适合以机械堆叠的方式粘合组分电池。开发了一种倒装芯片工艺，以结合单结GaAs和InGaAs电池，在1-Sun条件下测得的4端MSSC效率为25.2％。此外，还确定了一种新颖的InAlAs太阳能电池，可用于提供完善的GaAs太阳能电池的替代品。由于尚未广泛研究宽带隙InAlAs太阳能电池在光伏中的应用，因此制造了单结电池并分析了其与PV操作相关的特性。提取了微米级载流子中的少数载流子扩散长度，确认了InAlAs是适用于III-V太阳能电池的材料，对于具有800 nm厚吸收层的电池，其1-Sun转换效率为6.6％。考虑到商业上可获得的InP晶片的成本和较小的直径，InGaAs和InAlAs太阳能电池是在替代衬底（即GaAs）上制造的。作为第一个演示，使用在其上生长细胞的InxGa1-xAs变质缓冲层将GaAs衬底的晶格常数分级为InP。这是在替代基板上首次展示InAlAs太阳能电池，也是朝在Si上制造这些电池的第一步。提出的结果为基于InP晶格参数开发多结太阳能电池器件提供了一条途径，从而扩展了高效电池的可用带隙范围。

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    Mathews Ian P.;

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  • 年度 2014
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  • 正文语种 en
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  • 入库时间 2022-08-20 20:17:16

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