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首页> 外文OA文献 >Fabrication Technology and Characteristics Research of a Monolithically-Integrated 2D Magnetic Field Sensor Based on Silicon Magnetic Sensitive Transistors
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Fabrication Technology and Characteristics Research of a Monolithically-Integrated 2D Magnetic Field Sensor Based on Silicon Magnetic Sensitive Transistors

机译：基于硅磁敏晶体管的单片集成2D磁场传感器的制造技术及其特性研究

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A monolithically-integrated two-dimensional (2D) magnetic field sensor consisting of two difference structures (DSІ and DSII) is proposed in this paper. The DSІ and DSII are composed of four silicon magnetic sensitive transistors (SMST1, SMST2, SMST3 and SMST4) and four collector load resistors (RL1, RL2, RL3 and RL4). Based on the magnetic sensitive principle of SMST, the integrated difference structure can detect magnetic fields’ component (Bx and By) along the x-axis and y-axis, respectively. By adopting micro-electromechanical systems (MEMS) and packaging technology, the chips were fabricated on a p-type <100> orientation silicon wafer with high resistivity and were packaged on printed circuit boards (PCBs). At room temperature, when the VCE = 5.0 V and IB = 8.0 mA, the magnetic sensitivities (Sxx and Syy) along the x-axis and the y-axis were 223 mV/T and 218 mV/T, respectively. The results show that the proposed sensor can not only detect the 2D magnetic field vector (B) in the xy plane, but also that Sxx and Syy exhibit good uniformity.
机译：本文提出了一种由两种差分结构（DS1和DSII）组成的单片集成的二维（2D）磁场传感器。 DS1和DSII由四个硅磁敏感晶体管（SMST1，SMST2，SMST3和SMST4）和四个集电极负载电阻（RL1，RL2，RL3和RL4）组成。基于SMST的磁敏感原理，分别可以分别沿X轴和Y轴检测磁场'部件（Bx和旁）。通过采用微机电系统（MEMS）和包装技术，在具有高电阻率的p型<100>取向硅晶片上制造芯片，并在印刷电路板（PCB）上包装。在室温下，当VCE = 5.0V和IB = 8.0 mA时，沿X轴和Y轴的磁敏发生（SXX和Syy）分别为223mV / t和218mV / t。结果表明，所提出的传感器不仅可以检测XY平面中的2D磁场矢量（B），还可以呈现良好的均匀性。

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