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首页> 外文期刊>Journal of Semiconductors >Fabrication and characteristics of magnetic field sensors based on nano-polysilicon thin-film transistors
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Fabrication and characteristics of magnetic field sensors based on nano-polysilicon thin-film transistors

机译：基于纳米多晶硅薄膜晶体管的磁场传感器的制作与特性

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摘要

A magnetic field sensor based on nano-polysilicon thin films transistors (TFTs) with Hall probes is proposed. The magnetic field sensors are fabricated on 〈100〉 orientation high resistivity (ρ > 500 Ω·cm) silicon substrates by using CMOS technology, which adopt nano-polysilicon thin films with thicknesses of 90 nm and heterojunction interfaces between the nano-polysilicon thin films and the high resistivity silicon substrates as the sensing layers. The experimental results show that when VDS = 5.0 V, the magnetic sensitivities of magnetic field sensors based on nano-polysilicon TFTs with length - width ratios of 160 μm/80 μm, 320 μm/80 μm and 480 μm/80 μm are 78 mV/T, 55 mV/T and 34 mV/T, respectively. Under the same conditions, the magnetic sensitivity of the obtained magnetic field sensor is significantly improved in comparison with a Hall magnetic field sensor adopting silicon as the sensing layers.
机译：提出了一种基于带有霍尔探针的纳米多晶硅薄膜晶体管（TFT）的磁场传感器。磁场传感器是采用CMOS技术在〈100〉取向高电阻率（ρ> 500Ω·cm）硅基板上制造的，该传感器采用厚度为90 nm的纳米多晶硅薄膜以及纳米多晶硅薄膜之间的异质结界面高电阻率的硅衬底作为传感层。实验结果表明，当VDS = 5.0 V时，长宽比为160μm/ 80μm，320μm/ 80μm和480μm/ 80μm的基于纳米多晶硅TFT的磁场传感器的磁敏度为78 mV。 / T，55 mV / T和34 mV / T。在相同条件下，与采用硅作为感测层的霍尔磁场传感器相比，所获得的磁场传感器的磁灵敏度得到显着提高。

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