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Stoichiometric Bi2Se3 topological insulator ultra-thin films obtained through a new fabrication process for optoelectronic applications

机译：化学计量的Bi2se3拓扑绝缘体通过用于光电应用的新制造方法获得的超薄薄膜

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Matteo Salvato; Mattia Scagliotti; Maurizio De Crescenzi; Paola Castrucci; Fabio De Matteis; Michele Crivellari; Stefano Pelli Cresi; Daniele Catone; Thilo Bauch; Floriana Lombardi;
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1. Impact of Ultrathin Pb Films on the Topological Surface and Quantum-Well States of Bi2Se3 and Sb2Te3 Topological Insulators [J] . Surnin Yu. A., Klimovskikh I. I., Sostina D. M., Journal of Experimental and Theoretical Physics . 2018,第4期

机译：超薄PB膜对Bi2Se3和SB2Te3拓扑绝缘子拓扑表面和量子井状态的影响
2. Terahertz single conductance quantum and topological phase transitions in topological insulator Bi2Se3 ultrathin films [J] . Park Byung Cheol, Kim Tae-Hyeon, Sim Kyung Ik, Nature Communications . 2015,第Mara期

机译：拓扑绝缘体Bi2Se3超薄膜中的太赫兹单电导量子和拓扑相变
3. Topological Insulator Bi2Se3 Films on Silicon Substrates [J] . Journal of Electronic Materials . 2020,第3期

机译：硅基板上的拓扑绝缘体Bi2Se3薄膜
4. Experimental Evidence of THz-LSPR in Microstructures Patterned Bi2Se3 Topological Insulator Thin Films [C] . H. Sugimoto, H. Tabata International Conference on Infrared, Millimeter, and Terahertz Waves . 2020

机译：Thz-LSPR在微结构中的实验证据图案化Bi2Se3拓扑绝缘体薄膜
5. Magnetotransport Methods to Probe Surface States of Topological Insulator Thin Films and Topological Insulator/Ferromagnet (TI/FM) Heterostructures. [D] . Kumar, Raj. 2015

机译：探测拓扑绝缘体薄膜和拓扑绝缘体/铁磁体（TI / FM）异质结构表面状态的磁传输方法。
6. Twin domain imaging in topological insulator Bi2Te3 and Bi2Se3 epitaxial thin films by scanning X-ray nanobeam microscopy and electron backscatter diffraction [O] . Dominik Kriegner, Petr Harcuba, Jozef Veselý, -1

机译：通过扫描X射线纳米束显微镜和电子背散射衍射在拓扑绝缘体Bi2Te3和Bi2Se3外延薄膜中进行双畴成像
7. Ultra-thin Topological Insulator Bi2Se3 Nanoribbons Exfoliated by Atomic Force Microscopy [O] . Hong, Seung Sae, Kundhikanjana, Worasom, Cha, Judy J., 2010

机译：超薄拓扑绝缘体Bi2se3纳米带的原子剥离力显微镜
8. Ultra-thin Films for Optoelectronic Applications [R] . Ogata, N. 1999

机译：用于光电应用的超薄薄膜

Stoichiometric Bi2Se3 topological insulator ultra-thin films obtained through a new fabrication process for optoelectronic applications

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