Ka-Band AlGaN/GaN HEMT high power and driver amplifier MMICs

机译：Ka波段AlGaN / GaN HEMT高功率和驱动器放大器MMIC

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In this paper the MMIC technology, design and characterization of a high power amplifier and driver amplifier MMIC at 30 GHz in AlGaN/GaN HEMT technol-ogy are presented. The MMICs are designed using CPW technology on a 390 µm thick SiC substrate. The measured small-signal gain of the driver is 14 dB at 28.5 GHz and the measured output power is 28.6 dBm at 28 GHz. The power amplifier shows a measured small-signal gain of 10.7 dB at 25.5 GHz and output power of 34.1 dBm at 27 GHz. Both MMICs have a very good yield and performance for a first iteration design.

机译：本文介绍了MMIC技术，AlGaN / GaN HEMT技术中30 GHz的高功率放大器和驱动器放大器MMIC的设计和特性。 MMIC是使用CPW技术在390 µm厚的SiC衬底上设计的。在28.5 GHz时测得的驱动器小信号增益为14 dB，在28 GHz时测得的输出功率为28.6 dBm。功率放大器在25.5 GHz时测得的小信号增益为10.7 dB，在27 GHz时的输出功率为34.1 dBm。两种MMIC在首次迭代设计中都具有非常好的良率和性能。

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van Heijningen M.; van Vliet F.E.; Quay R.; van Raay F.; Kiefer R.; Müller S.; Krausse D.; Seelmann-Eggebert M.; Mikulla M.; Schlechtweg M.;
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年度 2005
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1. Implementation of mmWave AlGaN/GaN HEMTs and Power Amplifier MMICs [J] . Luo Xiaobin, Guo Dechun, Yu Weihua, Microwave Journal . 2015,第2期

机译：mmWave AlGaN / GaN HEMT和功率放大器MMIC的实现
2. A Scalable Large-Signal Multiharmonic Model of AlGaN/GaN HEMTs and Its Application in C-Band High Power Amplifier MMIC [J] . Yuehang Xu, Changsi Wang, Huan Sun, IEEE Transactions on Microwave Theory and Techniques . 2017,第8期

机译：AlGaN / GaN HEMT的可扩展大信号多谐波模型及其在C波段大功率放大器MMIC中的应用
3. A high-gain high-power amplifier MMIC for V-band applications using 100 nm AlGaN/ GaN dual-gate HEMTs [J] . DIRK SCHWANTUSCHKE, CHRISTIAN HAUPT, RUDOLF KIEFER, International Journal of Microwave and Wireless Technologies . 2012,第3期

机译：使用100 nm AlGaN / GaN双栅极HEMT的V波段应用的高增益大功率放大器MMIC
4. Ka-band AlGaN/GaN HEMT high power and driver amplifier MMICs [C] . van Heijningen, M., van Vliet, . 2005

机译：Ka波段AlGaN / GaN HEMT高功率和驱动器放大器MMIC
5. Design of High Power, Wideband Microwave Frequency Class F Power Amplifiers Using AlGaN/GaN HEMTs [D] . Tan, Jeffrey Lee. 2017

机译：使用AlGaN / GaN HEMT的大功率，宽带微波F类功率放大器的设计
6. An Improved Large Signal Model for 0.1 μm AlGaN/GaN High Electron Mobility Transistors (HEMTs) Process and Its Applications in Practical Monolithic Microwave Integrated Circuit (MMIC) Design in W band [O] . Junfeng Li, Shuman Mao, Yuehang Xu, 2018

机译：0.1μmAlGaN / GaN高电子迁移率晶体管（HEMT）工艺的改进大信号模型及其在W波段实用单片微波集成电路（MMIC）设计中的应用
7. Ka-Band AlGaN/GaN HEMT high power and driver amplifier MMICs [O] . van Heijningen M., van Vliet F.E., Quay R., 2005

机译：Ka波段AlGaN / GaN HEMT高功率和驱动器放大器MMIC
8. Channel Temperature Model for Microwave AlGaN/GaN HEMTs on SiC and Sapphire MMICs in High Power, High Efficiency SSPAs [R] . Freeman, Jon C. 2004

机译：高功率，高效率sspas中siC和蓝宝石mmIC上微波alGaN / GaN HEmT的沟道温度模型

Ka-Band AlGaN/GaN HEMT high power and driver amplifier MMICs

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