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Confined Energy State Based Hypothetical Observations about Device Parameters of AlGaN / GaN HEMT

机译：基于有限能态的AlGaN / GaN HEMT器件参数假说观察。

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In this paper, the gate threshold voltage of AlGaN / GaN HEMT devices has been analytically predictedudbased on the calculated energy levels inside triangular quantum well at the hetero-interface and foundudto be comparable with experimental data. The conceptual explanation of device linearity in large signaludapplications has been presented in terms of quantized energy levels in the quantum well. The dependenceudof threshold voltage and linear operable gate voltage range on a newly introduced parameter named “SurfaceudFactor” is analyzed as well.

机译：本文基于计算的异质界面三角量子阱内的能级，对AlGaN / GaN HEMT器件的栅极阈值电压进行了分析预测 ud，发现与实验数据具有可比性。根据量子阱中的量子能级，对大信号 ud应用中的器件线性进行了概念性解释。还分析了阈值电压和线性可操作栅极电压范围对新引入的名为“ Surface udFactor”的参数的依赖性。

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Das Palash; Biswas Dhrubes;
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年度 2015
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正文语种 en
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1. Identification of GaN Buffer Traps in Microwave Power AlGaN/GaN HEMTs Through Low Frequency S-Parameters Measurements and TCAD-Based Physical Device Simulations [J] . Nandha Kumar Subramani, Julien Couvidat, Ahmad Al Hajjar, Electron Devices Society, IEE . 2017,第3期

机译：通过低频S参数测量和基于TCAD的物理设备仿真识别微波功率AlGaN / GaN HEMT中的GaN缓冲阱
2. Review of AlGaN/GaN HEMTs Based Devices [J] . Ahmed M. Nahhas American Journal of Nanomaterials . 2019,第1期

机译：基于AlGaN / GaN HEMT的器件综述
3. Modeling of sheet carrier density and microwave frequency characteristics in Spacer based AlGaN/AlN/GaN HEMT devices [J] . A. Mohanbabu, N. Anbuselvan, N. Mohankumar, Solid-State Electronics . 2014,第jana期

机译：基于间隔器的AlGaN / AlN / GaN HEMT器件中薄层载流子密度和微波频率特性的建模
4. Paper Title The Breakdown Voltage of AlGaN/GaN HEMT is Restricted to The Structure Parameters of The Device: A Study Based on TCAD [C] . Liming Wang, Chunjian Tan, Houcai Luo, International Conference on Electronic Packaging Technology . 2018

机译：文章：AlGaN / GaN HEMT的击穿电压受器件结构参数的限制：基于TCAD的研究
5. An analytical and experimental biosensor for human MIG using AlGaN/GaN based HEMT devices. [D] . Trevino, Hector, II. 2014

机译：使用基于AlGaN / GaN的HEMT器件的人MIG分析和实验生物传感器。
6. High breakdown voltage in AlGaN/GaN HEMTs using AlGaN/GaN/AlGaN quantum-well electron-blocking layers [O] . Ya-Ju Lee, Yung-Chi Yao, Chun-Ying Huang, 2014

机译：使用AlGaN / GaN / AlGaN量子阱电子阻挡层的AlGaN / GaN HEMT中的高击穿电压
7. Identification of GaN Buffer Traps in Microwave Power AlGaN/GaN HEMTs Through Low Frequency S-Parameters Measurements and TCAD-Based Physical Device Simulations [O] . Subramani, Nandha Kumar, Couvidat, Julien, Hajjar, Ahmad Al, 2017

机译：通过低频s参数测量和基于TCaD的物理器件仿真识别微波功率alGaN / GaN HEmT中的GaN缓冲阱
8. Development of a Versatile Physics-Based Finite-Element Model of an AlGaN/GaN HEMT Capable of Accommodating Process and Epitaxy Variations and Calibrated Using Multiple DC Parameters (Postprint) [R] . Heller, E. R., Vetury, R., Green, D. S. 2011

机译：开发基于物理的alGaN / GaN HEmT有限元模型，该模型能够适应工艺和外延变化并使用多个DC参数进行校准（后印刷）

Confined Energy State Based Hypothetical Observations about Device Parameters of AlGaN / GaN HEMT

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