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Improved performance of GaAsSb/GaAs SQW lasers

机译：GaAsSb / GaAs SQW激光器的性能提高

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摘要

This paper reports the improvements and limitations of MBE grown 1.3μm GaAsSb/GaAs single QW lasers. At room temperature, the devices show a low threshold current density (Jth) of 253 Acm-2, a transparent current density of 98 Acm-2, an internal quantum efficiency of 71%, an optical loss of 18 cm-1 and a characteristic temperature (T0) = 51K. The defect related recombination in these devices is negligible and the primary non-radiative current path has a stronger dependence on the carrier density than the radiative current contributing to ~84% of the threshold current at RT. From high hydrostatic pressure dependent measurements, a slight decrease followed by the strong increase in threshold current with pressure is observed, suggesting that the device performance is limited to both Auger recombination and carrier leakage.
机译：本文报道了MBE生长的1.3μmGaAsSb / GaAs单QW激光器的改进和局限性。在室温下，这些器件显示出253 Acm-2的低阈值电流密度（Jth），98 Acm-2的透明电流密度，71％的内部量子效率，18 cm-1的光损耗和特性温度（T0）= 51K。这些器件中与缺陷相关的重组可以忽略不计，并且与在RT时约为阈值电流的84％的辐射电流相比，主要的非辐射电流路径对载流子密度的依赖性更大。通过高静水压相关测量，观察到阈值电流随压力而略有下降，然后急剧增加，这表明该器件的性能仅限于俄歇复合和载流子泄漏。

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