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Method and apparatus for improving temperature performance for GaAsSb/GaAs devices

机译:用于改善GaAsSb / GaAs器件的温度性能的方法和装置

摘要

A method and apparatus is provided for improving the temperature performance of GaAsSb materials utilizing an AlGaInP confinement structure. An active region containing a GaAsSb quantum well layer and (In)GaAs barrier layers is sandwiched between two AlGaInP confinement layers. AlGaInP confinement structures provide sufficient electron confinement, thereby improving the stability of the threshold current with respect to increasing temperature for GaAsSb/GaAs heterostructures.
机译:提供了一种利用AlGaInP限制结构来改善GaAsSb材料的温度性能的方法和设备。包含GaAsSb量子阱层和(In)GaAs势垒层的有源区夹在两个AlGaInP限制层之间。 AlGaInP限制结构提供了足够的电子限制,从而相对于GaAsSb / GaAs异质结构的温度升高,提高了阈值电流的稳定性。

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