首页>
外国专利>
Method and apparatus for improving temperature performance for GaAsSb/GaAs devices
Method and apparatus for improving temperature performance for GaAsSb/GaAs devices
展开▼
机译:用于改善GaAsSb / GaAs器件的温度性能的方法和装置
展开▼
页面导航
摘要
著录项
相似文献
摘要
A method and apparatus is provided for improving the temperature performance of GaAsSb materials utilizing an AlGaInP confinement structure. An active region containing a GaAsSb quantum well layer and (In)GaAs barrier layers is sandwiched between two AlGaInP confinement layers. AlGaInP confinement structures provide sufficient electron confinement, thereby improving the stability of the threshold current with respect to increasing temperature for GaAsSb/GaAs heterostructures.
展开▼