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Luminescence study of thermal treated and laser irradiated Bi_12GeO_20 and Bi_12SiO_20 crystals

机译：热处理和激光辐照的Bi_12GeO_20和Bi_12SiO_20晶体的发光研究

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摘要

Changes on the defect structure of Bi12GeO20 (BGO) and Bi12SiO20 (BSO) crystals induced by thermal treatments and laser irradiation have been studied by means of cathodoluminescence in the scanning electron microscope. The results have been compared to those previously reported for untreated and electron irradiated samples and recombination mechanisms responsible for some of the observed luminescence bands are discussed. Annealing of EGO samples causes the appearance of a new luminescence band at about 390 nm. The centers responsible for this band decorate the deformation slip bands in quenched EGO as observed in the cathodoluminescence images. The emission observed in BSO in the same spectral range is quenched during the annealing treatment. The annealing induced reduction of Bi ions to metallic Bi appears to be related to the quenching of a band at 640 nm observed in untreated samples.
机译：通过扫描电子显微镜的阴极发光研究了热处理和激光辐照引起的Bi12GeO20（BGO）和Bi12SiO20（BSO）晶体缺陷结构的变化。将结果与先前报告的未处理和电子辐照样品的结果进行了比较，并讨论了负责观察到的某些发光带的重组机制。 EGO样品的退火会导致在约390 nm处出现新的发光带。阴极发光图像中观察到，负责该谱带的中心修饰了淬火EGO中的形变谱带。在退火处理期间，在相同光谱范围内在BSO中观察到的发射被淬灭。退火引起的Bi离子还原成金属Bi的现象似乎与在未经处理的样品中观察到的640 nm带的猝灭有关。

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