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Unintentional boron incorporation in AlGaN layers grown by plasma-assisted MBE using highly efficient nitrogen RF plasma-sources

机译：使用高效氮RF等离子体源，通过等离子体辅助MBE在AlGaN层中无意掺入硼

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摘要

Plasma-assisted molecular beam epitaxy (PA-MBE) is now widely used for the growth of group III-nitrides. Many years ago it became clear that during PA-MBE there is unintentional doping of GaN with boron (B) due to decomposition of the pyrolytic boron nitride (PBN) cavity of the RF plasma source. In this paper we discuss the unintentional B incorporation for PA-MBE growth of GaN and AlxGa1−xN using a highly efficient RF plasma source. We have studied a wide range of MBE growth conditions for GaN and AlxGa1−xN with growth rates from 0.2 to 3 µm/h, RF powers from 200 to 500 W, different nitrogen flow rates from 1 to 25 sccm and growth times up to several days. The chemical concentrations of B and matrix elements of Al, Ga, N were studied as a functions of depth using secondary ion mass spectrometry (SIMS). We demonstrate that boron incorporation with this highly efficient RF plasma source is approximately 1×1018 to 3×1018 cm−3 for the AlxGa1−xN growth rates of 2 – 3 µm/h.
机译：等离子体辅助分子束外延（PA-MBE）现在被广泛用于III型氮化物的生长。许多年前，很明显，在PA-MBE期间，由于RF等离子体源的热解氮化硼（PBN）腔的分解，GaN意外掺入了硼（B）。在本文中，我们讨论了使用高效RF等离子体源无意地掺入GaN和AlxGa1-xN的PA-MBE生长的无意B。我们已经研究了GaN和AlxGa1-xN的多种MBE生长条件，其生长速率从0.2到3 µm / h，RF功率从200到500 W，不同的氮气流速从1到25 sccm，生长时间高达数倍。天。使用二次离子质谱（SIMS）研究了B和Al，Ga，N的元素的化学浓度与深度的关系。我们证明，对于AlxGa1-xN的2 – 3 µm / h的生长速度，硼与这种高效RF等离子体源的掺入量约为1×1018至3×1018 cm-3。

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