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Radiometric characterization of type-II InAs/GaSb superlattice (t2sl) midwave infrared photodetectors and focal plane arrays

机译：II型InAs / GaSb超晶格（t2sl）中波红外光电探测器和焦平面阵列的辐射表征

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摘要

In recent years, Type-II InAs/GaSb superlattice (T2SL) has emerged as a new material technology suitable for high performance infrared (IR) detectors operating from Near InfraRed (NIR, 2-3μm) to Very Long Wavelength InfraRed (LWIR, λ > 15μm) wavelength domains. To compare their performances with well-established IR technologies such as MCT, InSb or QWIP cooled detectors, specific electrical and radiometric characterizations are needed: dark current, spectral response, quantum efficiency, temporal and spatial noises, stability… In this paper, we first present quantum efficiency measurements performed on T2SL MWIR (3-5μm) photodiodes and on one focal plane array (320x256 pixels with 30μm pitch, realized in the scope of a french collaboration ). Different T2SL structures (InAs-rich versus GaSb-rich) with the same cutoff wavelength (λc= 5μm at 80K) were studied. Results are analysed in term of carrier diffusion length in order to define the optimum thickness and type of doping of the absorbing zone. We then focus on the stability over time of a commercial T2SL FPA (320x256 pixels with 30μm pitch), measuring the commonly used residual fixed pattern noise (RFPN) figure of merit. Results are excellent, with a very stable behaviour over more than 3 weeks, and less than 10 flickering pixels, possibly giving access to long-term stability of IR absolute calibration.
机译：近年来，II型InAs / GaSb超晶格（T2SL）成为一种新材料技术，适用于从近红外（NIR，2-3μm）到超长波长红外（LWIR，λ）操作的高性能红外（IR）检测器>15μm）的波长域。为了与成熟的红外技术（例如MCT，InSb或QWIP冷却探测器）的性能进行比较，需要特定的电学和辐射学表征：暗电流，光谱响应，量子效率，时空噪声，稳定性……在本文中，我们首先目前在T2SL MWIR（3-5μm）光电二极管和一个焦平面阵列（间距为30μm的320x256像素，在法国合作范围内实现）上进行的量子效率测量。研究了具有相同截止波长（在80K时λc=5μm）的不同T2SL结构（富InAs富GaSb）。根据载流子扩散长度来分析结果，以便确定吸收区的最佳厚度和掺杂类型。然后，我们关注商用T2SL FPA（320x256像素，间距为30μm）随时间的稳定性，测量常用的残留固定图案噪声（RFPN）品质因数。结果非常好，超过3周的行为非常稳定，并且闪烁像素少于10个，这可能使IR绝对校准具有长期稳定性。

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