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>Design and fabrication of high magnetic field gradients towards fault tolerant two-qubit gates with trapped ionsudusing long-wavelength radiation
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Design and fabrication of high magnetic field gradients towards fault tolerant two-qubit gates with trapped ionsudusing long-wavelength radiation
In this thesis, I discuss coherent manipulation of a trapped ytterbium ion using longudwavelength radiation and the results of experiments towards the performance of a two-ionudentanglement gate using a static magnetic field gradient of 23.3(6) T/m to create couplingudbetween an ion's internal state and its motion.ududAfter using these experiments to explain the requirements for high-fidelity entanglementudoperations, I continue by examining existing methods for creating this gradient, theudcurrent limiting factor in producing the highest fidelity operations. This includes a fulludcharacterisation of the gradients produced by symmetric scheme permanent magnets andudburied current carrying wires including development of scaling laws in order to createudoptimum gradients for a given trap geometry.ududI continue by proposing a new method by which extremely high gradients over 100 T/mudcan be created for planar chip traps with minimal modification to an existing experiment.udThese gradients are tailored for axial as well as radial entanglement schemes and aim toudshow that the technology exists in order to produce a two-qubit gate over the fault tolerantudthreshold.ududSubsequently, I discuss the implementation of this new scheme in an experiment beforeudconstructing the apparatus to accurately align a chip with these magnets and documentingudtheir installation into two new experimental setups. This includes a preliminary measurementudof the gradient produced by an imperfect setup outside of vacuum which verifiesudthose simulated at ~ 110 T/m.ududLastly, I discuss the prospects of on-chip magnetic materials and propose a new methodudwhich when sufficiently developed should allow for high magnetic field gradients to beudproduced on-chip at higher ion heights than when solely using current carrying wires.udAdditionally this scheme should allow for switchable gradients with maximised stabilityudin geometries previously not possible to create.
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机译：在这篇论文中，我讨论了使用长/超长波长辐射对ion离子的相干操纵，以及使用23.3（6）T / m的静磁场梯度创建两离子/纠缠门性能的实验结果离子内部状态与其运动之间的耦合。在使用这些实验解释了高保真度纠缠的要求之后，我继续研究了创建此梯度的现有方法，这是产生最高梯度的电流限制因素。保真操作。这包括对对称方案永磁体和埋没的载流导线所产生的梯度进行完全 u特征化，包括制定定律的定律，以便针对给定的阱几何形状产生 udoptimum梯度。 ud udI继续提出一种新的方法，只需对现有实验进行最小的修改，就可以为平面切屑捕集器创建超过100 T / m的极高梯度。 ud这些梯度适用于轴向和径向纠缠方案，旨在 ud表明该技术的存在是为了在容错 udthreshold上产生一个两比特的门。 ud ud随后，我在实验中讨论了这个新方案的实现，然后构造该设备以使这些磁铁精确地对准芯片并记录将其安装成两个新的实验装置。其中包括对真空以外的不完美设置所产生的梯度进行的初步测量 ud，该梯度验证了以约110 T / m的速度模拟的 ud。 ud ud最后，我讨论了片上磁性材料的前景并提出了一种新方法 ud这点应得到充分发展，以允许在更高的离子高度上在芯片上产生高磁场梯度，而不是仅使用载流导线。 ud另外，该方案应允许具有最大稳定性的可切换梯度 udin几何形状以前无法创建。
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