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Improved off-current and subthreshold slope in aggressively scaled poly-Si TFTs with a single grain boundary in the channel

机译：在通道中具有单晶界的积极缩放的多晶硅TFT中改善了截止电流和亚阈值斜率

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Walker P.; Mizuta Hiroshi; Uno S.; Furuta Y.; Hasko D.;
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年度 2004
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正文语种 {"code":"en","name":"English","id":9}
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1. Improved Off-Current and Subthreshold Slope in Aggressively Scaled Poly-Si TFTs With a Single Grain Boundary in the Channel [J] . Philip M. Walker, Hiroshi Mizuta, Shigeyasu Uno, IEEE Transactions on Electron Devices . 2004,第2期

机译：沟道中具有单个晶粒边界的积极缩放的多晶硅TFT中的改进的截止电流和亚阈值斜率
2. Gate-All-Around Single-Crystal-Like Poly-Si Nanowire TFTs With a Steep-Subthreshold Slope [J] . Liu T.-Y., Lo S.-C., Sheu J.-T. Electron Device Letters, IEEE . 2013,第4期

机译：具有陡峭亚阈值斜率的全栅门类单晶多晶硅纳米线TFT
3. Single-grain poly-Si TFT fabricated on poly-Si films prepared by metal imprint technology [J] . Kenji Makihira, Masahito Yoshii, Tanemasa Asano 電子情報通信学会技術研究報告. シリコン材料·デバイス. Silicon Devices and Materials . 2001,第16期

机译：通过金属压印技术在多晶硅膜上制造单晶多晶硅TFT
4. Short Channel Poly-Si TFT with Single Grain Boundary by Excimer Laser Annealing on Al-masked a-Si Layer [C] . Sang-Hoon Jung, Jae-Hoon Lee, Min-Koo Han Symposium on Amorphous and Heterogeneous Silicon-Based Films―2002, Apr 2-5, 2002, San Francisco, California . 2002

机译：铝掩模a-Si层上准分子激光退火的单晶边界短沟道多晶硅TFT
5. Field effect transistors based on single grains and single grain boundaries of an organic semiconductor. [D] . Chwang, Anna Be-Hwa. 2000

机译：基于有机半导体的单晶粒和单晶粒边界的场效应晶体管。
6. Analysis of a Lateral Grain Boundary for Reducing Performance Variations in Poly-Si 1T-DRAM [O] . Songyi Yoo, Wookyung Sun, Hyungsoon Shin 2020

机译：横向晶界降低Poly-Si 1T-DRAM的性能变化分析
7. Gate-All-Around Single-Crystal-Like Poly-Si Nanowire TFTs With a Steep-Subthreshold Slope [O] . Tung-yu Liu, Shen-chuan Lo, Jeng-tzong Sheu 2016

机译：具有陡峭亚阈值斜率的全栅极单晶体多晶硅纳米线TFT

Improved off-current and subthreshold slope in aggressively scaled poly-Si TFTs with a single grain boundary in the channel

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