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Triply resonant enhancement of third-order nonlinear optical susceptibility in compositionally asymmetric coupled quantum wells

机译:成分不对称耦合量子阱中三阶非线性光学磁化率的三重共振增强

摘要

[[abstract]]The third-order nonlinear optical susceptibility chi(3)(3omega) due to the intersubband transitions in the four-level AlInAs/GaInAs compositionally asymmetric coupled quantum well (CACQW) is investigated theoretically. The subband eigenenergy E(n) of the CACQW structure could be designed to form an equally spaced energy-level ladder. Since the eigenenergy spacing could be designed to resonate with the pumping source, the third-order nonlinear optical susceptibility could be greatly enhanced through the triple resonance. Based on the theoretical calculations, a magnitude of chi(3)(3omega) as high as 2.2 X 10(5) (nm/V)2 can be achieved for the CACQW structure. This is a more than eight orders of magnitude enhancement as compared to that of the bulk value in GaAs. In addition to the design of CACQW structure, the triple resonance can also be achieved by biasing the CACQW under a proper electric field due to the large Stark effect of the CACQW structure.
机译:[[摘要]]从理论上研究了由于四能级AlInAs / GaInAs组成不对称耦合量子阱(CACQW)中的子带间跃迁而引起的三阶非线性光学磁化率chi(3)(3omega)。可以将CACQW结构的子带本征能E(n)设计为形成等距的能级阶梯。由于本征能间隔可以设计成与泵浦源共振,因此通过三重共振可以大大提高三阶非线性光学磁化率。根据理论计算,CACQW结构的 chi(3)(3omega)的大小可以达到2.2 X 10(5)(nm / V)2。与GaAs中的整体值相比,这提高了八个数量级以上。除了CACQW结构的设计之外,由于CACQW结构的大斯塔克效应,还可以通过在适当的电场下偏置CACQW来实现三重谐振。

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  • 作者

    Chenhsin Lien;

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  • 年度 2012
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  • 原文格式 PDF
  • 正文语种 [[iso]]en
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