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Modeling and Manufacturing of a Micromachined Magnetic Sensor Using the CMOS Process without Any Post-Process

机译:modeling and manufacturing of a micromachined magnetic sensor Using the CmOs process without any post-process

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摘要

The modeling and fabrication of a magnetic microsensor based on a magneto-transistor were presented. The magnetic sensor is fabricated by the commercial 0.18 mm complementary metal oxide semiconductor (CMOS) process without any post-process. The finite element method (FEM) software Sentaurus TCAD is utilized to analyze the electrical properties and carriers motion path of the magneto-transistor. A readout circuit is used to amplify the voltage difference of the bases into the output voltage. Experiments show that the sensitivity of the magnetic sensor is 354 mV/T at the supply current of 4 mA.
机译:介绍了基于磁晶体管的磁微传感器的建模与制造。磁传感器通过商业0.18毫米互补金属氧化物半导体(CMOS)工艺制造,无需任何后处理。有限元方法(FEM)软件Sentaurus TCAD用于分析电磁晶体管的电学特性和载流子运动路径。读出电路用于将基极的电压差放大为输出电压。实验表明,在4 mA的供电电流下,磁传感器的灵敏度为354 mV / T。

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