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A low power high power supply rejection ratio bandgap reference for portable applications

机译:适用于便携式应用的低功耗高电源抑制比带隙基准

摘要

A multistage bandgap circuit with very high power supply rejection ratio was designed and simulated. The key features of this bandgap include multiple power modes, low power consumption and a novel resistor trimming strategy. This design was completed in deep submicron CMOS technology, and is especially suited for portable applications. The bandgap designed achieves over 90 dB of power supply rejection and less than 17 microvolts of noise without any external filtering. With an external filtering capacitor, this performance is significantly enhanced. In addition, the design includes an efficient voltage-to-current converter and a fast-charge circuit for charging the external capacitor.
机译:设计并仿真了具有很高的电源抑制比的多级带隙电路。该带隙的关键特性包括多种功率模式,低功耗和新颖的电阻调整策略。该设计采用深亚微米CMOS技术完成,特别适合便携式应用。设计的带隙实现了超过90 dB的电源抑制性能,并且在不进行任何外部滤波的情况下,噪声低于17微伏。使用外部滤波电容器,可以显着提高性能。此外,该设计还包括一个高效的电压-电流转换器和一个用于为外部电容器充电的快速充电电路。

著录项

  • 作者

    Sundar Siddharth;

  • 作者单位
  • 年度 2008
  • 总页数
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类

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