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Method for holding an ultra-thin semiconductor wafer for a semiconductor integration process
Method for holding an ultra-thin semiconductor wafer for a semiconductor integration process
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机译：保持用于半导体集成工艺的超薄半导体晶片的方法
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摘要
The present invention discloses a method of holding an ultra-thin semiconductor wafer for a semiconductor integration process comprising the following main steps: 1) spin coating the front of a first temporary carrier with a first temporary bonding adhesive; 2) Relatively bonding the ultra-thin semiconductor wafer to the front of the first temporary carrier; 3) spin coating spin coating the face of a second temporary backing with a second temporary bonding adhesive; 4) Relatively bonding the back side of the ultra-thin semiconductor wafer to the front side of the second temporary carrier; 5) separating the ultra-thin semiconductor wafer from the first temporary carrier; 6) making an integrated interconnect structure; 7) performing a binding integration process; 8) Separating the integrated wafer from the second carrier. In the present invention, it is ensured by matching the two kinds of temporary bonding adhesives with different softening temperatures and two pieces of temporary carriers and using a temporary bonding and debonding process that the ultra-thin semiconductor wafer in the transfer, clamping, making the connection structure and bonding as well other three-dimensional integration processes is each supported by a temporary carrier, whereby the risk of breaking the wafer in the integration process is effectively reduced.
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