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TEST ELEMENT FOR QUALITY CONTROL OF PRODUCTION OF HIGH VOLTAGE SILICON CARBIDE SILICA DIODES OF SCHOTKA
TEST ELEMENT FOR QUALITY CONTROL OF PRODUCTION OF HIGH VOLTAGE SILICON CARBIDE SILICA DIODES OF SCHOTKA
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机译:肖特卡高压碳化硅二氧化硅产品生产质量控制的测试元素
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摘要
The field of application of the proposed utility model is microelectronics, namely, it can be used for quality control in the manufacture of silicon carbide-based semiconductor devices. The purpose of the proposed utility model is to increase the control efficiency and its quality in the manufacture of Schottky silicon carbide diodes. for quality control of high-voltage Schottky silicon carbide diodes, which consist of those formed on an epitaxial structure -stand conductivity type planar working transition and separating rings other conductivity type, wherein the test element is a lateral transistor structure with a gap between the planar working junction (collector) and the emitter equal to the distance between the dividing rings test Schottky diode.
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