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Patterning process control method, lithographic apparatus, metrology apparatus lithography cells and associated computer programs

机译：图案化工艺控制方法，光刻设备，计量设备光刻单元以及相关的计算机程序

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摘要

Methods for determining corrections to parameters of interest, such as critical dimensions of the patterning process, associated apparatus and computer programs. The method includes determining an exposure control correction for an exposure control parameter based on a measurement of a parameter of interest of the structure, and exposure control relevance and process control relevance, and optionally, determining a process control correction for the process control parameter. It includes. Exposure control relevance describes the dependence of the parameter of interest on the exposure control parameter, and process control relevance describes the dependence of the parameter of interest on the process control parameter. Exposure control correction and process control correction can be co-optimized to minimize variations relative to the target parameter of interest of the parameter of interest of subsequent exposed and processed structures.

机译：用于确定对感兴趣的参数（例如构图过程的关键尺寸，关联的设备和计算机程序）的校正的方法。该方法包括基于对结构的感兴趣参数的测量以及曝光控制相关性和过程控制相关性来确定针对曝光控制参数的曝光控制校正，以及可选地，确定针对过程控制参数的过程控制校正。这包括。曝光控制相关性描述了关注参数对曝光控制参数的依赖性，过程控制相关性描述了关注参数对过程控制参数的依赖性。曝光控制校正和过程控制校正可以被共同优化以最小化相对于后续曝光和加工结构的目标参数的目标目标参数的变化。

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公开/公告号KR102128577B1

专利类型
公开/公告日2020-07-01

原文格式PDF
申请/专利权人 에이에스엠엘 네델란즈 비.브이.;램 리서치 코퍼레이션;
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申请/专利号KR20187024012
发明设计人 쿠비스 마이클;요켐슨 마리누스;와이즈 리차드 스테픈;샴마 네이더;딕싯 기리쉬 아난트;레진 리스베스;뱌트키나 예카테리나 미카일로브나;루카 멜리사;뮬켄스 요하네스 카타리누스 휴베르투스;
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申请日2017-02-16
分类号G03F7/20;G03F1/80;
国家 KR
入库时间 2022-08-21 11:04:20

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