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- TFTThin Film Transistor Based on Graphine Comprising N-Dopped Graphine Layer as Active Layer
- TFTThin Film Transistor Based on Graphine Comprising N-Dopped Graphine Layer as Active Layer
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机译：-基于石墨烯的N掺杂石墨烯层作为有源层的TFT薄膜晶体管
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摘要
The present invention relates to a high-quality, high-functional graphene-based TFT comprising a nitrogen-doped graphene layer as an active layer, and more particularly, a gate electrode; A gate insulating layer positioned on the gate electrode; An active layer positioned on a portion of the gate insulating layer and including a nitrogen-doped graphene layer; A first electrode positioned on one side of the active layer; It relates to a graphene-based TFT including; a second electrode positioned on the other side of the active layer. According to the present invention, a TFT having very excellent characteristics can be obtained by directly growing graphene on a Ti layer, damaging it with a remote plasma, and then doping it with nitrogen gas to prepare a graphene active layer.
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