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SiC MOSFET SiC MOSFETMANUFACTURING METHOD FOR SiC MOSFET WITH UNIFORM THICKNESS GATE OXIDE BY SURFACE MODIFITAION AND SiC MOSFET MANUFACTURED USING THE SAME
SiC MOSFET SiC MOSFETMANUFACTURING METHOD FOR SiC MOSFET WITH UNIFORM THICKNESS GATE OXIDE BY SURFACE MODIFITAION AND SiC MOSFET MANUFACTURED USING THE SAME
The present invention relates to a manufacturing process capable of forming a gate oxide film having a uniform thickness when manufacturing a trench MOSFET. More specifically, the present invention, in the method of manufacturing a trench structure MOSFET, forming a substrate (substrate), forming a drift layer on the substrate, forming a trench in the substrate and the drift layer (trench) And a step of selectively surface-modifying only the formed trench wall, and performing gate oxidation.
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