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Radiation Response of Negative Gate Biased SiC MOSFETs

机译：负栅偏置SiC MOSFET的辐射响应

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Silicon carbide (SiC) metal-oxide-semiconductor field effect transistors (MOSFETs) are expected as power electronic devices for high radiative conditions, including nuclear plants and space. Radiation response of commercial-grade prototype SiC MOSFETs with applying the gate bias is of interest, in terms of installation of the device in robots or sensors working under such radioactive circumstances. Due to gamma-rays irradiation, the threshold voltages (Vth) of samples with un- and negative-biased up to −4.5 V slightly shift toward the negative voltage side. In contrast, the positive bias of 2.25 V shifts Vth more negatively. Positive charge densities trapped in the gate oxide of un- and positive-biased samples increased with increasing dose. However, no significant increase was observed for negative-biased samples of −2.25 and −4.5 V. We calculated characteristic parameters for the accumulation of holes in the gate oxide, σpJp which is defined as the product of current density due to holes generated by irradiation and capture cross section for a hole in a trap, and it is lower for these negative biased samples compared with the unbiased case. Application of appropriate negative gate biases to SiC MOSFETs during irradiation suppresses accumulation of positive charges in the gate oxide and negative shift of Vth, due to irradiation.
机译：碳化硅（SiC）金属氧化物半导体场效应晶体管（MOSFET）有望作为用于高辐射条件（包括核电站和太空）的电力电子设备。就将器件安装在在这种放射性环境下工作的机器人或传感器中而言，应用栅极偏置的商业级原型SiC MOSFET的辐射响应是令人感兴趣的。由于伽马射线的照射，未偏压和负偏压高达-4.5 V的样品的阈值电压（Vth）会稍微向负电压侧偏移。相反，2.25 V的正偏置使Vth负移得更多。随着剂量的增加，未偏压样品和正偏压样品的栅极氧化物中捕获的正电荷密度会增加。但是，对于-2.25和-4.5 V的负偏置样品，未观察到明显增加。我们计算了栅氧化物中空穴积累的特征参数σpJp，其定义为由于辐照产生的空穴导致的电流密度的乘积并捕获阱中孔的横截面，并且这些负偏压样品的横截面比无偏压情况下的横截面要小。在辐照期间向SiC MOSFET施加适当的负栅极偏置可抑制栅极氧化物中正电荷的积累和由于辐照引起的Vth的负向偏移。

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